VITESSE VSC7938RO, VSC7938W Datasheet

VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7938
SONET/SDH 3.125Gb/s
Laser Diode Driver with Automatic Power Control
G52349-0, Rev 3.0 Page 1 01/20/01
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Features Applications
General Description
The VSC7938 is a single 3.3V or 5V supply l aser diode driv er special ly desig ned for S DH/SONET appli ca­tions up to 3.125Gb/s. External resistors set a wide range of bias and modulation currents for driving the laser. Data and clock inputs accept differential PECL signals. The autom atic power control (APC) loop maintains a constant average optical power over temperature and lifetime. The dominant pole of the APC loop can be con­trolled with an external capacitor. Other features include enable/disable control, short-circuit protection for the modulation and bias inputs, short rise and fall times, programmable slow-start circuit to set laser turn-on delay, and failure-monitor output to indicate when the APC loop is unable to maintain the average optical power. The VSC7938 is available in die form or in a 48-pin TQFP package.
Block Diagram
• Power Supply: 3.3V or 5V ±5%
• AC-Coupled to Laser Diode
• Programmable Modulation Current: 5mA to 60mA
• Programmable Bias Current: 1mA to 100mA
• Enable/Disable Control
• Typical Rise/Fall Times of 60ps
• Automatic Optical Average Power Control
• Supply Current of 33mA at 3.3V
3.3V Operation
Q
SET
CLR
Q
D
MUX
DATA+
APC
DATA-
CLK+
CLK-
ENABLE
BIAS
IOUT+ IOUT-
MD
MODSET
BIASMAX
CAPC APCSET
FAIL
LATCH
C
D
L
P
L
P
1nF
V
CC
V
CC
C
F
R
F
DISABLE
SLWSTRT
SDH/SONET at 622Mb/s, 1.244Gb/s,
2.488Gb/s, 3.125Gb/s
Full-Speed Fibre Channel (1.062Gb/s)
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7938
SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Co ntrol
Page 2 G52349-0, Rev 3.0
01/20/01
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Electrical Characteristics
Table 1: AC Specifications
AC specifications are guaranteed by design an d ch aracterization. Typical values are for 3.3V.
NOTES:(1) Measured with 622Mb/s 0-1 pattern, LATCH=high. (2) PWD = (wider pulse - narrower pulse) / 2).
Table 2: DC Specifications
NOTES: (1) Both I
BIAS
and I
MOD
will turn off if any of the current set pins are grounded. (2) Assumes laser diode to monitor diode transfer func-
tion does not change with temp erature.
Symbol Parameter Min Typ Max Units Conditions
t
SU
Input Latch Setup Time 100 ps LATCH=high
t
H
Input Latch Hold Time 100 ps LATCH=high Enable/Start-up Delay 250 ns
t
R
Output Rise Time 60 80 ps 20% to 80%
t
F
Output Fall Time 60 80 ps 20% to 80% PWD Pulse Width Distortion 10 50 ps See Notes 1, 2 CID
MAX
Maximum Consecu tive Identical Digits 80 bits
t
J
Jitter Generation 7 20 ps
p-p
Jitter BW=12kHz to 20MHz, 0-1 pattern.
Symbol Parameter Min Typ Max Units Conditions
I
CC
Supply Current TBD 45 mA
R
MODSET
=7.3k
R
BIASMAX
=4.8k
I
BIAS
and I
MOD
excluded
V
CC
=5V
I
BIAS
Bias Current Range 1 100 mA Voltage at BIAS pin=(VCC-1.6)
I
BIAS-OFF
Bias Off Current 100 µA
ENABLE=low or DISABLE=high
(1)
S
BIAS
Bias Current Stability
230
ppm/°C
APC Open loop. I
BIAS
=100mA
900 APC Open loop. I
BIAS
=1mA
Bias Current Absolute Accuracy ±15 % Refers to part-to-part variation
VR
MD
Monitor Diode Reverse Bias Voltage 1.5 V
I
MD
Monitor Diode Reverse Current Range 18 1000 µA
Monitor Diode Bias Setpoint Stability
-480 -50 480
ppm/°C
IMD=1mA
(2)
90 IMD=18µA
(2)
Monitor Diode Bias Absolute Accuracy -15 15 % Refers to part-to-part variation
I
MOD
Modulation Curren t Rang e 5 60 mA
I
MOD-OFF
Modulation Off Cur re nt 200 µA
ENABLE=low or DISABLE=high
(1)
Modulation Current Absolute Accuracy ±15 % See Note 2
Modulation Current Stability
-480 -50 480
ppm/°C
I
MOD
=60mA
250 I
MOD
=5mA
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7938
SONET/SDH 3.125Gb/s
Laser Diode Driver with Automatic Power Control
G52349-0, Rev 3.0 Page 3 01/20/01
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Table 3: PECL and TTL/CMOS Inputs and Outputs Specifications
Absolute Maximum Ratings
(1)
Power Supply Voltage (VCC)...............................................................................................................-0.5V to 6V
Current into BIAS.....................................................................................................................-20mA to +150mA
Current into OUT+, OUT-...............................................................................................................................TBD
Current into MD.............................................................................................................................-5mA to +5mA
Current into FAIL
......................................................................................................................... -10mA to 30mA
Voltage at DATA+, DATA-, CLK+, CLK-, ENABLE, LATCH.........................................-0.5V to (V
CC
+ 0.5V)
Voltage at APCFILT, MODSET, BIASMAX, APCSET, MD, FAIL
, SLWSTRT..........................-0.5V to +3.0V
Voltage at OUT+, OUT- ..................................................................................................... -0.5V to (V
CC
+ 1.5V)
Voltage at BIAS .................................................................................................................. -0.5V to (V
CC
+ 0.5V)
Continouous Power Dissipation (T
A
= +85°C, TQFP derate 20.8mW/°C above +85°C) .......................1350mW
Operating Junction Temperature Range...................................................................................... -55°C to +150°C
Storage Temperature Range ........................................................................................................ -65°C to +165°C
NOTE: (1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without caus-
ing permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may affect device reliability.
Recommended Operating Conditions
Positive Voltage Rail (VCC)............................................... ......................................................+3.135V to +5.25V
Negative Voltage Rail (GND) ............................................................................................................................ 0V
Modulation Current (I
MOD
)
(1)
.......................................................................................................................30mA
Ambient Temperature Range (T
A
).................................................................................................-40°C to +85°C
NOTE: (1) VCC = 3.3V, I
BIAS
= 60mA.
Symbol Parameter Min Typ Max Units Conditions
V
ID
Differential Input Voltage 100 1600 mV
p-p
(DATA+)-(DATA-)
V
ICM
Common-Mode Input V oltage
V
CC
-
1.49
VCC -
1.32
VCC ­V
ID
/4
V PECL Compatible
I
IN
Clock and Data Input Current -1 10 µA
V
IH
TTL Input High Voltage (ENABLE, LATCH)
2.0 V
V
IL
TTL Input Low Voltage (ENABLE, LATCH)
0.8 V
TTL Output High Voltag e (FAIL
)2.4
V
CC
-
0.3
V
CC
V Sourcing 50µA
TTL Output Low Voltage (FAIL) 0.1 0.44 V Sinking 100µA
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7938
SONET/SDH 3.125Gb/s Laser Diode Driver with Automatic Power Co ntrol
Page 4 G52349-0, Rev 3.0
01/20/01
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Bare Die Descriptions
Figure 1: Pad Assignments
VSC7938
Die Size: 1773µm x 2233µm (0.0698" x 0.0879") Die Thickness: 625
µm (0.0246")
Pad Pitch: 115µm (0.0045") Pad Size: 95µm x 95µm (0.0037" x 0.0037")
Pad to Pad Clearance: 20µm (0.0008
") Pad Passivation Opening: 95µm x 95µm (0.0037" x 0.0037") Scribe Size: 75µm (0.0030")
Pad 10
CLK-
Pad 9 CLK+
Pad 8 VCC1
Pad 7 GND1
Pad 6 VCC1
Pad 5 DATA-
Pad 4
DATA+
Pad 3 VCC1
Pad 2 GND1
Pad 1 GND2
Pad 48
VCC2
Pad 47
BIASMAX
20
µm
(0.0008")
2233
µm
(0.0879")
1773
µm (0.0698")
75
µm
(0.0030")
Pad 46
MODSET
Pad 45
GND2
Pad 44
APCSET
Pad 43
AUTSEL
Pad 42
GND2
Pad 41
PB_GND
Pad 40
GND3
Pad 39
PB_GND
Pad 38
CAPC
Pad 37
VCC3
Pad 36
GND3
Pad 12
GND1
Pad 13 LATCH
Pad 14 ENABLE
Pad 15
DISABLE
Pad 16
GND1
Pad 17
SLWSTRT
Pad 18
VCC1
Pad 19
FAIL
Pad 20
GND4
Pad 21
PB_GND
Pad 22
APCFILT
Pad 23
GND4
Pad 24
VCC4
Pad 25
BIAS
Pad 11
VCC1
Pad 27
VCC4
Pad 28
DB_OUT+
Pad 29
OUT+
Pad 30
OUT-
Pad 31
DB_OUT-
Pad 32
VCC4
Pad 33 GND4
Pad 34
GND3
Pad 35
MD
Pad 26
PB_GND
VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7938
SONET/SDH 3.125Gb/s
Laser Diode Driver with Automatic Power Control
G52349-0, Rev 3.0 Page 5 01/20/01
© VITESSE SEMICONDUCTOR CORPORATION 741 Calle Plano Camarillo, CA 93012
Tel: (800) VITESSE FAX: (805) 987-5896 Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Table 4: Pad Coordinates
Signal
Name
Pad
Number
Coordinates (µm)
Signal
Name
Pad
Number
Coordinat es (µm)
X Y X Y
GND2 1 1613.55 1863.475 BIAS 25 159.45 368.475 GND1 2 1414.525 2073.55 PB_GND 26 369.525 159.45 VCC1 3 1289.525 2073.55 VCC4 27 484.525 159.45 DATA+ 4 1 174.525 2073.55 DB_OUT+ 28 599.525 159.45 DATA- 5 1059.525 2073.55 OUT+ 29 714.525 159.45 VCC1 6 944.525 2073.55 OUT- 30 829.525 159.45 GND1 7 829.525 2073.55 DB_OUT- 31 944.525 159.45 VCC1 8 714.525 2073.55 VCC4 32 1059.525 159.45 CLK+ 9 599.525 2073.55 GND4 33 1174.525 159.45 CLK- 10 484.525 2073.55 GND3 34 1289.525 159.45 VCC1 11 369.525 2073.55 MD 35 1404.525 159.45 GND1 12 159.45 1863.475 GND3 36 1613.55 368.475 LATCH 13 159.45 1748.475 VCC3 37 1613.55 483.475 ENABLE 14 159.45 1633.475 CAPC 38 1613.55 598.475 DISABLE 15 159.45 1518.475 PB_GND 39 1613.55 713.475 GND1 16 159.45 1403.475 GND3 40 1613.55 828.475 SLWSTRT 17 159.45 1288.475 PB_GND 41 1613.55 943.475 VCC1 18 159.45 1058.475 GND2 42 1613.55 1058.475 FAIL
19 159.45 1058.475 AUTSEL 43 1613.55 1173.475 GND4 20 159.45 828.475 APCSET 44 1613.55 1288.475 PB_GND 21 159.45 828.475 GND2 45 1613.55 1403.475 APCFILT 22 159.45 598.475 MODSET 46 1613.55 1518.475 GND4 23 159.45 598.475 BIASMAX 47 1613.55 1633.475 VCC4 24 159.45 483.475 VCC2 48 1613.55 1748.475
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