VITESSE VSC7807X, VSC7807WD, VSC7807WC, VSC7807WB, VSC7807WA Datasheet
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7807
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Features Applications
• Integrated Photodetector/Transimpedance Amplifier
Optimized for High-Speed Optical Communications
Applications
• Fibre Channel/Gigabit Ethernet-Compatible
• High Bandwidth: 1300MHz
• Low Input Noise Equivalent Power: 2.2µW
• Large Optically Active Area
• Single 3.3V Power Supply
• 2.125Gb/s Data Rate
• 70µm Optically Active Area
• Packages: TO-46, TO-56, Bare Die
• Gigabit Ethernet Optical Receivers
• Fibre Channel Optical Receivers
• ATM Optical Receivers
• SONET/SDH
• System Interconnect
General Description
The VSC7807 integrated Photodetector/Transimpedance Amplifier provides a highly integrated solution
for converting 850nm light from a fiber optic communications channel into a differential output voltage. The
benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs process are fully utilized to provide very high
bandwidth and low noise in a product with a large optically active area for easy alignment. The sensitivity, duty
cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. The
VSC7807 is available in either die form, flat-windowed packages or ball-lens packages.
By using a Metal-Semiconductor-Metal (MSM) photodetector with a monolithic integrated transimpedance
amplifier , t he in put capac it ance is lowered which allows for a larger optica ll y act i ve ar ea than i n di scr et e phot odetectors. Integration also allows superior tracking over process, temperature and voltage between the photodetector and the amplifier, resulting in higher performance. The VSC7807 can easily be used in developing Fibre
Channel Electro-Optic Receivers which exhibit very high performance and ease of use.
VSC7807 Block Diagram
+3.3V
DOUTP
DOUTN
Both DOUTP and DOUTN are back-terminated to 25Ω.
G52363-0, Rev 2.1 Page 1
04/05/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
VITESSE
SEMICONDUCTOR CORPORATION
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Table 1: Electro-Optical Specifications
Symbol Parameters Min Typ
V
SS
I
DD
PSRR Power Supply Rejection Ratio - -10 - dB
λ Wavelength 700 840 850 nm
F
c
BW Optical Modulation Bandwidt h - 1300 - MHz -3dB, P = -15dBm
S Sensitivity - 20 - dBm 2.488Gb/s, BER10
R
o
V
D
R
D
V
DC
∆V
DC
NEP
V
NO
DCD Duty Cycle Distortion - - 4.5 % P = -5dBm
I
OUT
PDJ Pattern Dependent Jitter - - 40 ps
PPJ PP Jitter - 190 200 ps P = -5dBm
T
R
T
F
NOTES: (1) Specified over 10°C to 90°C junction. (2) Typical conditions 25°C and 3.3V power supply. (3) See Note 1 in Appli-
Supply Voltage 3.0 3.3 3.6 V
Supply Current - - 40 mA
Low Frequency Cutoff - 1.0 2.5 MHz -3dB, P
Single-Ended Ou tput Impedance - 25 - Ω
Differential Output Voltag e 0.2 - - V
Differential Responsivity 1.6 2.0 - mV/µW
Output Bias Voltage 1.0 - - V
Bias Off s e t Voltage - - 200 mV
Input Noise Equivalent Power - 1 2.2 µW rms P = 0mW
O
Output Noise Voltage - - 1.25 mV rms P = 0mW
Output Drive Current 2.0 2.6 - mA P = -5dBm
Optically Active Area - 70 - µm Diameter
Rise Time - - 200 ps 20% to 80% P = -5dBm
Fall Time - - 200 ps 20% to 80% P = -5dBm
cation Note 48. (4) P = Incident Optical Power. (5) See Note 2 In Application Note 48.
(1)
(2)
Advance Product Information
VSC7807
Max Units Conditions
Frequencies up to 40MHz.
Use external filter to get PSRR
of -35dB
P = -5 dBm,
R
R
At 50MHz
P = -5dBm
+/-10% Voltage Window
(3)
.
(4)
= -15dBm
= 100Ω differe ntial
L
= 100Ω
L
-12(5)
Page 2 G52363-0, Rev 2.1
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
04/05/01
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7807
Absolute Maximum Ratings
Power Supply Voltage (VSS).............................................................................................................................. 6V
Storage Humidity s(relative humidity, including condensation)........................................................... 5% to 95%
Operating Humidity (relative humidity, excluding condensation)........................................................ 8% to 80%
Impact Shock (IS)
Incident Optical Power................................................................................................................................+3dBm
Storage Temperature Range (case temperature under bias)
NOTES: (1) CAUTION: Stresses listed under “Absolute Ma ximum Rat ings ” may be appl ied to devi ces one at a tim e without ca using perm anent
damage. Functionality at or a bove the val ues li sted is no t im plied. E xposure to these v alue s for ex tend ed pe riods may affe ct device reliability. (2) Half sine wave, pulse duration 1 ±0.5ms, 3 blows in each di rection.
(2)
....................................................................................................................................... 500G
(1)
Photodetector/Transimpedance Amplifier
Family for Optical Communication
........................................................−55°C to +125°C
Recommended Operating Conditions
Positive Voltage Rail (VSS) ................................................................................................................3.0V to 3.6V
Optical Power................................................................................................................................................ 0dBm
Operating Temperature Range (T
Figure 1: Pin Diagram (TO-46 and TO-56 packages)
)............................................................................0°C Ambient to +85°C Case
A
BottomView
VSS
DOUTP
GND
Table 2: Pin Table Specifications for Ball Lens Packages, Flat Window Packages and Bare Die
Symbol Description
DOUTP Data output normal (with reference to incident light)
DOUTN Data output complement (inverting) (with reference to incident light)
VSS Power supply
GND Ground (package case)
DOUTN
G52363-0, Rev 2.1 Page 3
04/05/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
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