VITESSE VSC7710WB, VSC7710X, VSC7710WD, VSC7710WC Datasheet

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Infor m a t ion

VSC7710

Photodetector/Transimpedance Amplifier

Family for Optical Communication

Features

• Integrated Photodetector/Transimpedance Amplifier Family Optimized for High Speed Optical Communications Applications

• Integrated AGC

• Fibre Channel and Gigabit Ethernet

Part Number

VSC7710 1.25 1300 .22 75

Data Rate

(Gb/s)

Bandwidth

(MHz)

• High Bandwidth

• Low Input Noise Equivalent Power

• Single 5V Supply

Input Noise

µW rms)

(

Optically Active Area

µm diameter)

(

General Description

The VSC7710 integrated PIN Photodetector/Transimpedance Amplifiers provides a highly integrated solution for converting 1300 nm light from a fiber optic communications channel into a differential output voltage. The benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs-III process are fully utilized to provide a very high bandwidth and low noise amplifier. The PIN detector is 75 plied internally eliminating the need for a separate bias connection. The sensi t ivit y, duty cycle distortion and jitter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. Parts are available in flatwindowed or lensed packages.

The use of a photodetector and transimpedance amplifier hybrid, reduces the input capacitance, resulting in higher sensitivity and bandwidth and improved speed of response. These parts can easily be used in developing Fibre Channel and Gigabit Ethernet electro-optic Receivers for the 900- 1600 nm spectra l range w hich exhibit very high performance and ease of use.

µm in diameter. The detector bias is sup-

VSC7710 Block Diagram

+5V

+

_

G52139-0, Rev 2.2 Page 1 04/02/01

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.c om

Internet: www.vitesse.com

D0

D1

VITESSE

SEMICONDUCTOR CORPORATION

Photodetector/Transim pe dan ce Am pl if ier

Advance Product Information

Family for Optical Communication

Table 1: Electro-Optic Specifications

Symbol Parameter Min Typ Max Units Conditions

V

DD

λ Wavelength 1270 1355 nm f

c

Tr T S Sensitivity -28 dBm BER 10

D

r

R

o

V

d

PSRR Power Supply Rejection Ratio 35 dB I

s

BW Optical Modulation Bandwidth 700 1300 MHz

Rd Differential Responsivity 2.5 mV/µW V

n

NEP PDJ Pattern Dependent Jitter 60 ps DCD Duty Cycle Distortion 5 % P = -3dBm

ýV Bias Offset Voltage 200 mV P = -3dBm

Supply Voltage 4.5 5.5 V

Low Frequency Cutoff 1.4 MHz

Rise/Fall Time 300 ps

f

Dynamic Range 25 dB Single Ended Output I m pe da n ce 25 90 ¾ Differential Output Voltage 0.25 1.2 V P = -3 dBm, R = 100Ω

Supply Current 62 mA P = -28 to -3 dBm

Output Noise Voltage 1.2 mV Input Noise Equivalent Optical Power 0.22 µW RMS BW = 1500MHz, P = 0mW

O

RMS

-3dB P = -22dBm, f

20% to 80% P = -3 dBm

f = 0.3MHz - 40MHz Hybrid Differential

-3dB P = -22dBm, f

ΡΛ = 100Ω

P = -22dBm f BW = 1500MHz, P = 0mW

P = -3dBm ±10% Voltage Window

VSC7710

= 50MHz

r

-12

B = 1063Mb/s

= 50MHz

r

= 50MHz

r

Page 2 G52139-0, Rev 2.2

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Internet: www.vitesse.com

04/02/01

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Infor m a t ion

VSC7710

Figure 1: Amplitude vs. Frequency

Photodetector/Transimpedance Amplifier

Family for Optical Communication

Frequency response of VSC7710WB (Upper 3db frequency is measured with respect to response at 50 MHz)

Table 2: Absolute Maximum Ratings

Symbol Parameter Limits

V

DD

T

stg

P

inc

Table 3: Recommended Operating Conditions

Symbol Parameter Limits

V

DD

T

op

G52139-0, Rev 2.2 Page 3 04/02/01

Power Supply 6V Storage Temperature -55°C to 125°C (case temperature under bias) Incident Optical Power +3 dBm

Power Supply 4.5-5.5V (5.0V nominal) Operating Temperature 0°C (ambient) to 70°C case

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

VITESSE

SEMICONDUCTOR CORPORATION

Photodetector/Transim pe dan ce Am pl if ier Family for Optical Communication

Table 4: Pin Table Specifications for TO-46(ball lens), TO-56 (flat window) Packages and Bare Die

Symbol Description

+

D

OUT

–

D

OUT

VDD Power supply GND Ground (package case)

Note: Pin Diagram is identical for both TO-46 and TO-56 package styles.

+

D

OUT

Data output normal (with reference to incident light) Data output complement (inverting) (with reference to incid e nt ligh t)

Figure 2: Pin Diagram

Advance Product Information

VSC7710

VDD

–

D

OUT

GND

Figure 3: Schematic View of Bare Die Pad Assignments

CATHODE

GND

VDD

GND

VDD

ANODE

–

D

OUT

+

D

OUT

ANODE

Page 4 G52139-0, Rev 2.2

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

04/02/01

VITESSE

SEMICONDUCTOR CORPORATION

Advance Product Infor m a t ion

VSC7710

Photodetector/Transimpedance Amplifier

Family for Optical Communication

Thermal Re si stance Calcu lation

In order to relate the junction temperature to an equivalent case temperature, the following thermal characteristics of the package are provided (note that the thermal conductivity is identical for TO-46 and TO-56 package styles).

Table 5: Thermal Resistance Calculation for TO-56 and TO-46 Packages.

Chip Size 0.168cm x 0.104cm Thermal Path

Chip Area A 0.015 cm

Die height (T

Epoxy thickness (T

Header thickness (Theader) (ave. for TO-46 and TO- 56)

K GaAs 0.55W / cm °C

K epoxy 0.0186W / cm °C

K kovar 0.17W / cm °C

) 0.066 cm

die

) 0.0076 cm

epoxy

Thermal Conductivities

0.115 cm

2

T

J

θ

GaAs

θ

EXPOXY

θ

T

C

KOVAR

T

GaAsA

K

T

epoxyA

K

T

kovarA

K

die

epoxy

kovar

θ

GaAs

θ

epoxy

θ

kovar

θ

JC

= Thermal Resistance from Junction to Case = (8 + 27.24 + 47) = 82.24 °C/W

Example:

For VSC7710 at nominal supply current of 25mA and V Temperature rise from junction to case = 0.025A x 5V x 82.24 °C/W = 10.28 °C

0.066

0.55 x 0.015

0.0076

0.0186 x 0.015

0.12

0.17 x 0.015

= 8 °C/W==

= 27.24 °C/W==

= 47 °C/W==

DD

= 5V

G52139-0, Rev 2.2 Page 5 04/02/01

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com