VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
VSC7121
Quad Port Bypass Circuit for 1.0625 Gbit/sec
Fibre Channel Arbitrated Loop Disk Arrays
Page 4
VITESSE SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896
8/31/98
G52110-0, Rev. 4.1
Table 2: AC Characteristics
(Over recommended operating conditions).
Table 3: DC Characteristics
(Over recommended operating conditions).
Parameters
Description Min. Max. Units Conditions
T
1
Flow-Through Propagation Delay
Rising Edge to Rising Edge
7.0 ns
Delay with all circuits bypassed. 75
Ohm Load
T
2
Flow through Propagation Delay
Falling Edge to Falling Edge
7.0 ns
Delay with all circuits bypassed. 75
Ohm load.
T
SDR
, T
SDF
Serial data rise and fall time — 300 ps. 20% to 80%, tested on a sample basis
Parameters
Description Min Typ Max Units Conditions
V
IH(TTL)
Input HIGH voltage (SEL - TTL) 2.0 — 5.5 V I
IH
< 6.6 mA @ V
IH
= 5.5 V
V
IL(TTL)
Input LOW voltage (SEL - TTL) 0 — 0.8 V —
I
IH(TTL)
Input HIGH current (SEL- TTL) — 50 500
µ
AV
IN
= 2.4 V
I
IL(TTL)
Input LOW current (SEL - TTL) — — -500
µ
AV
IN
= 0.5 V
V
DD
Supply voltage 3.10 — 3.50 V V
DD
= 3.30V +
5%
I
DD
Supply current — — 170 mA Outputs open, V
DD
= V
DD
max
P
D
Power Dissipation 0.6 W Outputs open, V
DD
= V
DD
max
∆
V
IN(DF)
Receiver differential peak-to-peak
Input Sensitivity, IN+/- & L_SIn+/-
300 2600 mVp-p
AC Coupled.
Internally biased at V
DD
/2 ∆
V
OUT(L_SO)
L_SOn+/- output differential peakto-peak voltage swing
1000 — 2200 mVp-p 50 Ω to V
DD
– 2.0 V
∆
V
OUT(OUT)
OUT+/- output differential peak-topeak voltage swing
1200 2200 mVp-p 50 Ω to V
DD
– 2.0 V