Vishay Telefunken CQX48B Datasheet
CQX48
Vishay Telefunken
1 (5)
Rev. 5, 16-Nov-99
www.vishay.de • FaxBack +1-408-970-5600
Document Number 81000
GaAs Infrared Emitting Diode in Side View Package
Description
CQX48 is a standard GaAs infrared emitting diode in
a flat sideview plastic package.
A small recessed spherical lens provides an improved
radiant intensity in a low profile case.
The diode is case compatible to the BPW78 phototransistor, allowing the user to assemble his own
optical interrupters.
Features
D
Side view case with spherical lens
D
Radiation direction perpendicular to mounting
direction
D
Angle of half intensity ϕ = ± 25
°
D
Peak wavelength
l
p
= 950 nm
D
High reliability
D
Case compatible with BPW78
94 8743
Applications
Radiation source in near infrared range
Absolute Maximum Ratings
T
amb
= 25_C
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
R
6 V
Forward Current I
F
100 mA
Surge Forward Current tp x 100 ms I
FSM
2 A
Power Dissipation P
V
170 mW
Junction Temperature T
j
100
°
C
Operating Temperature Range T
amb
–40...+100
°
C
Storage Temperature Range T
stg
–40...+100
°
C
Soldering Temperature t x 5 s T
sd
260
°
C
Thermal Resistance Junction/Ambient R
thJA
450 K/W
CQX48
Vishay Telefunken
2 (5) Rev. 5, 16-Nov-99
www.vishay.de • FaxBack +1-408-970-5600
Document Number 81000
Basic Characteristics
T
amb
= 25_C
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 100 mA, tp x 20 ms V
F
1.3 1.7 V
Breakdown Voltage IR = 100 mA V
(BR)
6 V
Junction Capacitance VR = 0 V, f = 1 MHz, E = 0 C
j
50 pF
Radiant Power IF = 50 mA, tp x 20 ms
f
e
10 mW
Temp. Coefficient of
f
e
IF = 50 mA TK
f
e
–0.8 %/K
Angle of Half Intensity ϕ ±25 deg
Peak Wavelength IF = 50 mA
l
p
950 nm
Spectral Bandwidth IF = 50 mA
Dl
50 nm
Rise time IF = 1 A, tp/T = 0.01,
tpx
10 ms
t
r
400 ns
Fall Time IF = 1 A, tp/T = 0.01,
tpx
10 ms
t
f
450 ns
Type Dedicated Characteristics
T
amb
= 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Radiant Intensity IF=50 mA,
tpx
20ms
CQX 48 B I
e
2 mW/sr
Typical Characteristics (T
amb
= 25_C unless otherwise specified)
020406080
0
50
100
150
200
250
P – Power Dissipation ( mW )
V
T
amb
– Ambient Temperature ( °C )
100
94 8029 e
R
thJA
Figure 1. Power Dissipation vs. Ambient Temperature
020406080
0
25
50
75
100
125
I – Forward Current ( mA )
F
T
amb
– Ambient Temperature ( °C )
100
94 7916 e
R
thJA
Figure 2. Forward Current vs. Ambient Temperature
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