Vishay Telefunken CNY75GC, CNY75GB, CNY75GA, CNY75C, CNY75B Datasheet
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CNY75(G) Series
Optocoupler with Phototransistor Output
Description
The CNY75(G) series consists of a phototransistor
optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package.
The elements are mounted on one leadframe using
a coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.
Applications
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Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
D
For appl. class I – IV at mains voltage ≤ 300 V
D
For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:
Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor
system interface.
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
D
VDE 0884
Optocoupler for electrical safety requirements
D
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 V
D
VDE 0804
Telecommunication apparatus and data
processing
D
IEC 65
Safety for mains-operated electronic and related
household apparatus
RMS
)
14827
C
B
65
A (+) C (–) n.c.
2
E
4
31
95 10805
Order Instruction
Ordering Code CTR Ranking Remarks
CNY75A/ CNY75GA
CNY75B/ CNY75GB
CNY75C/ CNY75GC
1)
G = Leadform 10.16 mm; G is not market on the body
Rev. A4, 11–Jan–99 141
1)
1)
1)
63 to 125%
100 to 200%
160 to 320%
CNY75(G) Series
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Features
Approvals:
D
BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
D
FIMKO (SETI): EN 60950,
Certificate number 12399
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
VDE 0884, Certificate number 94778
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
= 6 kV peak
V
IOTM
D
Isolation test voltage
(partial discharge test voltage) V
D
Rated isolation voltage (RMS includes DC)
V
IOWM
= 600 V
(848 V peak)
RMS
= 1.6 kV
pd
D
Rated recurring peak voltage (repetitive)
= 600 V
V
IORM
D
Creepage current resistance according to
RMS
VDE 0303/IEC 1 12
Comparative Tracking Index: CTI = 275
D
Thickness through insulation ≥ 0.75 mm
General features:
D
Isolation materials according to UL94-VO
D
Pollution degree 2
(DIN/VDE 0110 part 1 resp. IEC 664)
D
Climatic classification 55/100/21 (IEC 68 part 1)
D
Special construction:
Therefore, extra low coupling capacity of
typical 0.3 pF, high Common Mode Rejection
D
Low temperature coefficient of CTR
D
CTR offered in 3 groups
D
Coupling System A
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector base voltage V
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Coupler
Parameter Test Conditions Symbol V alue Unit
AC isolation test voltage (RMS) t = 1 min V
Total power dissipation T
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T
≤ 25°C P
amb
≤ 25°C P
amb
≤ 25°C P
amb
R
F
FSM
V
CBO
CEO
ECO
C
CM
V
IO
tot
amb
stg
sd
5 V
60 mA
3 A
100 mW
j
125
°
C
90 V
90 V
7 V
50 mA
100 mA
150 mW
j
125
°
C
3.75 kV
250 mW
–55 to +100
–55 to +125
260
°
C
°
C
°
C
Rev. A4, 11–Jan–99142
CNY75(G) Series
C F
CE F
CE F
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Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA V
Reverse current VR = 6 V I
Junction capacitance VR = 0, f = 1 MHz C
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector base voltage IC = 100 mA V
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 100 mA V
Collector emitter cut-off
VCE = 20 V, IF = 0 I
current
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter
saturation voltage
Cut-off frequency VCE = 5 V, IF = 10 mA,
Coupling capacitance f = 1 MHz C
IF = 10 mA, IC = 1 mA V
R
L
= 100
W
F
R
j
CBO
CEO
ECO
CEO
CEsat
f
c
k
1.25 1.6 V
10
m
50 pF
90 V
90 V
7 V
150 nA
0.3 V
110 kHz
0.3 pF
A
Current Transfer Ratio (CTR)
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/I
F
VCE = 5 V, IF = 1 mA CNY75(G)A CTR 0.15
CNY75(G)B CTR 0.3
CNY75(G)C CTR 0.6
VCE = 5 V, IF = 10 mA CNY75(G)A CTR 0.63 1.25
CNY75(G)B CTR 1 2
CNY75(G)C CTR 1.6 3.2
Rev. A4, 11–Jan–99 143
CNY75(G) Series
gg
Tr test
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Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters Test Conditions Symbol Value Unit
Forward current I
Output (Detector)
Parameters Test Conditions Symbol Value Unit
Power dissipation T
≤ 25°C P
amb
Coupler
Parameters Test Conditions Symbol Value Unit
Rated impulse voltage V
Safety temperature T
si
si
IOTM
si
130 mA
265 mW
6 kV
150
°
C
Insulation Rated Parameters (according to VDE 0884)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Partial discharge test voltage –
Routine test
Partial discharge test voltage – tTr = 60 s, t
Lot test (sample test)
Insulation resistance VIO = 500 V R
275
tot
P – Total Power Dissipation ( mW )
95 10923
250
225
200
175
150
125
100
75
Isi (mA)
50
25
0
0 25 50 75 100 125 150 175
T
amb
P
(mW)
– Ambient Temperature ( °C
100%, t
(see figure 2)
VIO = 500 V,
T
amb
VIO = 500 V,
T
amb
(construction test only)
si
= 1 s V
test
= 10 s, V
test
≤ 100°C
≤ 150°C
V
V
V
V
13930
IOTM
V
R
R
IOTM
V
Pd
IOWM
IORM
pd
pd
IO
IO
IO
1.6 kV
6 kV
1.3 kV
10
10
10
0
t
1
12
11
9
t1, t2= 1 to 10 s
t3, t4= 1 s
t
t
test
stres
= 10 s
= 12 s
tTr= 60 s
W
W
W
t
t
t
test
4
3
t
t
stres
2
t
Figure 1. Derating diagram
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
Rev. A4, 11–Jan–99144
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