CNY64/ CNY65/ CNY66
Optocoupler with Phototransistor Output
Description
The CNY64/ CNY65/ CNY66 consist of a phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 4-lead plastic package.
The single components are mounted in opposite oneanother, providing a distance between input and
output for highest safety requirements of > 3 mm.
Applications
Circuits for safe protective separation against
electrical shock according to safety class II
(reinforced isolation):
D
For appl. class I – IV at mains voltage ≤ 300 V
D
For appl. class I – IV at mains voltage ≤ 600 V
D
For appl. class I – III at mains voltage ≤ 1000 V
according to VDE 0884, table 2, suitable for:
A (+)
Vishay Telefunken
14832
C
Switch-mode power supplies, line receiver,
computer peripheral interface, microprocessor
system interface.
VDE Standards
These couplers perform safety functions according
to the following equipment standards:
D
VDE 0884
Optocoupler for electrical safety requirements
D
IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 V
D
VDE 0804
Telecommunication apparatus and data
processing
D
IEC 65
Safety for mains-operated electronic and related
household apparatus
D
VDE 0700/IEC 335
Household equipment
D
VDE 0160
Electronic equipment for electrical power
installation
D
VDE 0750/IEC 601
Medical equipment
RMS
)
C (–)
95 10850
E
Rev. A4, 11–Jan–99 117
CNY64/ CNY65/ CNY66
Vishay Telefunken
Order Instruction
Ordering Code CTR Ranking Remarks
CNY64/ CNY65/ CNY66 50 to 300%
CNY64A/ CNY65A 63 to 125%
CNY64B/ CNY65B 100 to 200%
Features
Approvals:
D
Underwriters Laboratory (UL) 1577 recognized,
file number E-76222
D
VDE 0884, Certificate number 76814
D
Rated insulation voltage (RMS includes DC)
= 1000 V
V
IOWM
D
Rated recurring peak voltage (repetitive)
= 1000 V
V
IORM
D
Creepage current resistance according to
VDE 0303/IEC 1 12
VDE 0884 related features:
D
Rated impulse voltage (transient overvoltage)
V
= 8 kV peak
IOTM
D
Isolation test voltage
(partial discharge test voltage) V
= 2.8 kV peak
pd
Comparative Tracking Index: CTI = 200
D
Thickness through insulation > 3 mm
D
Coupling Systems:
CNY64 Coupling System H,
CNY65 Coupling System J,
CNY66 Coupling System K,
Absolute Maximum Ratings
Input (Emitter)
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
≤ 25°C P
amb
(1450 V peak)
RMS
RMS
R
F
FSM
V
j
5 V
75 mA
1.5 A
120 mW
100
°
C
Output (Detector)
Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T
≤ 25°C P
amb
Junction temperature T
Coupler
Parameter Test Conditions Symbol V alue Unit
AC isolation test voltage (RMS) t = 1 min V
Total power dissipation T
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T
≤ 25°C P
amb
CEO
ECO
C
CM
V
j
IO
tot
amb
stg
sd
32 V
7 V
50 mA
100 mA
130 mW
100
8.2 kV
250 mW
–55 to +85
–55 to +100
260
Rev. A4, 11–Jan–99118
°
C
°
C
°
C
°
C
CNY64/ CNY65/ CNY66
Vishay Telefunken
Electrical Characteristics (T
amb
= 25°C)
Input (Emitter)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA V
Junction capacitance VR = 0, f = 1 MHz C
Output (Detector)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 1 mA V
Emitter collector voltage IE = 100 mA V
Collector emitter cut-off
current
VCE = 20 V, If = 0 I
Coupler
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter
saturation voltage
Cut-off frequency VCE = 5 V, IF = 10 mA,
Coupling capacitance f = 1 MHz C
IF = 10 mA, IC = 1 mA V
R
L
= 100
W
F
j
CEO
ECO
CEO
CEsat
f
c
k
1.25 1.6 V
50 pF
32 V
7 V
200 nA
0.3 V
110 kHz
0.3 pF
Current Transfer Ratio (CTR)
Parameter Test Conditions Type Symbol Min. Typ. Max. Unit
IC/I
F
VCE = 5 V, IF = 10 mA CNY64,
CNY65,
CNY66
CNY64A,
CNY65A
CNY64B,
CNY65B
CTR 0.5 1 3
CTR 0.63 1.25
CTR 1 2
Rev. A4, 11–Jan–99 119