Vishay Telefunken BYW86, BYW85, BYW84, BYW83, BYW82 Datasheet
Silicon Mesa Rectifiers
g
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Controlled avalanche characteristics
D
Low reverse current
D
High surge current loading
D
Electrically equivalent diodes:
BYW82 – 1N5624 BYW83 – 1N5625
BYW84 – 1N5626 BYW85 – 1N5627
Applications
Rectifier, general purpose
BYW82...BYW86
Vishay Telefunken
94 9588
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BYW82 VR=V
=Repetitive peak reverse voltage
BYW83 VR=V
BYW84 VR=V
BYW85 VR=V
BYW86 VR=V
Peak forward surge current tp=10ms, half sinewave I
Repetitive peak forward current I
Average forward current
T
amb
x65°
C
Pulse avalanche peak power tp=20ms, half sinewave,
FSM
FRM
I
FAV
P
RRM
RRM
RRM
RRM
RRM
R
200 V
400 V
600 V
800 V
1000 V
100 A
18 A
3 A
1000 W
Tj=175 °C
Pulse energy in avalanche mode,
I
=1A, Tj=175°C E
(BR)R
R
20 mJ
non repetitive
(inductive load switch off)
i2*t–rating i2*t 40 A2*s
Junction and storage
Tj=T
stg
–65...+175
°
temperature range
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=10mm, TL=constant R
on PC board with spacing 37.5mm R
thJA
thJA
25 K/W
70 K/W
C
Document Number 86051
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
BYW82...BYW86
y
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=3A V
Reverse current VR=V
VR=V
RRM
, Tj=100°C I
RRM
Breakdown voltage IR=100mA, tp/T=0.01, tp=0.3ms V
Diode capacitance VR=0, f=0.47MHz C
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
IF=1A, di/dt=5A/ms, VR=50V t
Reverse recovery charge IF=1A, di/dt=5A/ms Q
Characteristics (Tj = 25_C unless otherwise specified)
F
I
R
R
(BR)
D
rr
rr
rr
1.0 V
0.1 1
5 10
m
m
1600 V
65 100 pF
2 4
3 6
6 10
m
m
m
A
A
s
s
C
40
30
thJA
R – Therm. Resist. Junction / Ambient ( K/W )
94 9563
20
10
0
0 5 10 15 25
l – Lead Length ( mm )
ll
TL=constant
20
30
Figure 1. Max. Thermal Resistance vs. Lead Length
2.0
1.6
1.2
VR=V
f=1kHz
R
thJA
RRM
=70K/W
PCB
4
3
2
VR=V
RRM
f=1kHz
R
=25K/W
thJA
1
L=10mm
FAV
I – Average Forward Current ( A )
0
0
40 80 120 160
T
– Ambient Temperature ( °C )94 9564
amb
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
1000
100
m
10
Scattering Limit
200
0.8
0.4
FAV
I – Average Forward Current ( A )
0
0
40 80 120 160
T
– Ambient Temperature ( °C )94 9565
amb
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
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2 (4)
200
1
R
I – Reverse Current ( A )
VR=V
RRM
200
94 9566
0.1
0 40 80 120 160
T
– Junction Temperature ( °C )
j
Figure 4. Reverse Current vs. Junction Temperature
Document Number 86051
Rev. 2, 24-Jun-98
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