Silicon Mesa Rectifiers
Features
D
Controlled avalanche characteristics
D
Glass passivated junction
D
Hermetically sealed package
D
Low reverse current
D
High surge current loading
D
Electrically equivalent diodes:
BYW52 – 1N5059 BYW53 – 1N5060
BYW54 – 1N5061 BYW55 – 1N5062
Applications
Rectifier, general purpose
BYW52...BYW56
Vishay Telefunken
94 9539
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BYW52 VR=V
=Repetitive peak reverse voltage
BYW53 VR=V
BYW54 VR=V
BYW55 VR=V
BYW56 VR=V
Peak forward surge current tp=10ms, half sinewave I
Repetitive peak forward current I
Average forward current ϕ=180
°
Pulse avalanche peak power tp=20ms half sinus wave,
T
=175°C
j
Pulse energy in avalanche mode,
I
=1A, Tj=175°C E
(BR)R
FSM
FRM
I
FAV
P
RRM
RRM
RRM
RRM
RRM
R
R
200 V
400 V
600 V
800 V
1000 V
50 A
12 A
2 A
1000 W
20 mJ
non repetitive
(inductive load switch off)
i2* t–rating i2*t 8 A2*s
Junction and storage
Tj=T
stg
–55...+175
°
temperature range
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=10mm, TL=constant R
on PC board with spacing 25mm R
thJA
thJA
45 K/W
100 K/W
C
Document Number 86049
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
BYW52...BYW56
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
Reverse current VR=V
VR=V
RRM
, Tj=100°C I
RRM
Breakdown voltage IR=100mA, tp/T=0.01, tp=0.3ms V
Diode capacitance VR=0, f=0.47MHz C
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
IF=1A, di/dt=5A/ms, VR=50V t
Reverse recovery charge IF=1A, di/dt=5A/ms Q
Characteristics (Tj = 25_C unless otherwise specified)
F
I
R
R
(BR)
D
rr
rr
rr
0.9 1.0 V
0.1 1
5 10
m
m
1600 V
50 pF
4
m
4
m
200 nC
A
A
s
s
120
100
80
60
40
20
0
thJA
R – Therm. Resist. Junction / Ambient ( K/W )
ll
TL=constant
0
51015 25
l – Lead Length ( mm )94 9101
20
30
Figure 1. Typ. Thermal Resistance vs. Lead Length
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
R
v
45K/W
thJA
0.4
FAV
I – Average Forward Current ( A )
0
l=12mm
VR=V
RRM
0
40 80 120 160
T
– Ambient Temperature ( °C )94 9172
amb
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
1000
100
m
Scattering Limit
10
200
0.4
R
=100K/W
FAV
I – Average Forward Current ( A )
94 9163
0.2
0
0 40 80 120 160
thJA
VR=V
RRM
T
– Ambient Temperature ( °C )
amb
PCB
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
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2 (4)
200
1
R
I – Reverse Current ( A )
VR=V
RRM
200
94 9176
0.1
0 40 80 120 160
T
– Junction Temperature ( °C )
j
Figure 4. Reverse Current vs. Junction Temperature
Document Number 86049
Rev. 2, 24-Jun-98