BYW32...BYW36
Fast Silicon Mesa Rectifiers
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Low reverse current
D
Soft recovery characteristics
Applications
Fast rectifier and switch for example for TV–line output
circuits and switch mode power supply
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BYW32 VR=V
=Repetitive peak reverse voltage
Peak forward surge current tp=10ms,
half sinewave
Repetitive peak forward current I
Average forward current ϕ=180
°
Junction and storage temperature range Tj=T
BYW33 VR=V
BYW34 VR=V
BYW35 VR=V
BYW36 VR=V
I
I
Vishay Telefunken
94 9539
RRM
RRM
RRM
RRM
RRM
FSM
FRM
FAV
stg
200 V
300 V
400 V
500 V
600 V
50 A
12 A
2 A
–55...+175
°
C
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=10mm, TL=constant R
on PC board with spacing 25mm R
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
Reverse current VR=V
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
Document Number 86048
Rev. 2, 24-Jun-98
VR=V
RRM
, Tj=150°C I
RRM
thJA
thJA
F
I
R
R
rr
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45 K/W
100 K/W
0.95 1.1 V
1 5
60 150
m
m
200 ns
A
A
1 (4)
BYW32...BYW36
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
120
100
80
60
ll
40
20
0
thJA
0
R – Therm. Resist. Junction / Ambient ( K/W )
51015 25
l – Lead Length ( mm )94 9552
TL=constant
20
30
Figure 1. Max. Thermal Resistance vs. Lead Length
1.2
R
=100K/W
thJA
fv20kHz
PC Board
200
FAV
I – Average Forward Current ( A )
94 9558
1.0
0.8
0.6
0.4
0.2
0
0 40 80 120 160
T
– Ambient Temperature ( °C )
amb
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
1000
Scattering Limit
VR=V
RRM
T
– Junction Temperature ( °C )
j
200
m
R
I – Reverse Current ( A )
94 9560
100
10
1
0.1
0 40 80 120 160
Figure 4. Reverse Current vs. Junction Temperature
100
Tj=175°C
Tj=25°C
3.0
VF – Forward Voltage ( V )
F
I – Forward Current ( A )
94 9555
10
1
0.1
0.01
0 0.6 1.2 1.8 2.4
Figure 5. Max. Forward Current vs. Forward Voltage
2.0
1.6
1.2
0.8
0.4
FAV
I – Average Forward Current ( A )
0
fv20kHz
R
=45K/W
thJA
l=10mm
0
40 80 120 160
T
– Ambient Temperature ( °C )94 9559
amb
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
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2 (4)
200
20
16
12
8
D
4
C – Diode Capacitance ( pF )
94 9557
0
0.1 1 10
VR – Reverse Voltage ( V )
100
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
Document Number 86048
Rev. 2, 24-Jun-98