Fast Silicon Mesa Rectifiers
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Low reverse current
D
Soft recovery characteristics
BYT54.
Vishay Telefunken
Applications
Very fast rectifiers and switches
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BYT54A VR=V
=Repetitive peak reverse voltage
BYT54B VR=V
BYT54D VR=V
BYT54G VR=V
BYT54J VR=V
BYT54K VR=V
BYT54M VR=V
Peak forward surge current tp=10ms,
I
half sinewave
Average forward current on PC board I
l=10mm, TL=25°C I
Junction and storage BYT54A–BYT54K Tj=T
temperature range
BYT54M Tj=T
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol V alue Unit
Junction ambient l=10mm, TL=constant R
on PC board with spacing 25mm R
thJA
thJA
94 9539
RRM
RRM
RRM
RRM
RRM
RRM
RRM
FSM
FAV
FAV
stg
stg
45 K/W
100 K/W
50 V
100 V
200 V
400 V
600 V
800 V
1000 V
30 A
0.75 A
1.25 A
–65...+175°C
–65...+165°C
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
Reverse current VR=V
VR=V
RRM
, Tj=150°C I
RRM
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
Document Number 86031
Rev. 2, 24-Jun-98
F
I
R
R
rr
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1.5 V
5
m
150
m
100 ns
A
A
1 (4)
BYT54.
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
120
100
80
60
ll
40
20
0
thJA
0
R – Therm. Resist. Junction / Ambient ( K/W )
51015 25
TL=constant
20
30
l – Lead Length ( mm )94 9552
Figure 1. Max. Thermal Resistance vs. Lead Length
1.2
1.0
VR=V
thJA
RRM
f=50Hz
v
100K/W
PCB
0.8
R
0.6
0.4
0.2
FAV
I – Average Forward Current ( A )
0
200
94 9457
0 40 80 120 160
T
– Ambient Temperature ( °C )
amb
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
1000
Scattering Limit
100
m
10
1
R
I – Reverse Current ( A )
VR=V
RRM
200
94 9459
0.1
0 40 80 120 160
T
– Junction Temperature ( °C )
j
Figure 4. Reverse Current vs. Junction Temperature
10
Tj=25°C
1
Scattering Limit
0.1
F
I – Forward Current ( A )
0.01
3.0
94 9460
0 0.6 1.2 1.8 2.4
VF – Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
2.0
VR=V
1.6
R
thJA
L=10mm
f=50Hz
v
1.2
0.8
0.4
FAV
I – Average Forward Current ( A )
0
0
40 80 120 160
T
– Ambient Temperature ( °C )94 9458
amb
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
www.vishay.de • FaxBack +1-408-970-5600
2 (4)
RRM
45K/W
200
20
16
12
8
D
C – Diode Capacitance ( pF )
4
fv1kHz
T
=25°C
j
0
100
94 9461
0.1 1 10
VR – Reverse Voltage ( V )
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
Document Number 86031
Rev. 2, 24-Jun-98