Vishay Telefunken BYT53G, BYT53F, BYT53D, BYT53C, BYT53B Datasheet
...
Very Fast Silicon Mesa Rectifiers
g
g
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Low reverse current
D
Soft recovery characteristics
Applications
Very fast rectifiers and switches
Switched mode power supplies
High–frequency inverter circuits
BYT53.
Vishay Telefunken
94 9539
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BYT53A VR=V
=Repetitive peak reverse voltage
BYT53B VR=V
BYT53C VR=V
BYT53D VR=V
BYT53F VR=V
BYT53G VR=V
Peak forward surge current tp=10ms,
I
half sinewave
Average forward current l=10mm, TL=25°C I
Junction and storage temperature range Tj=T
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=10mm, TL=constant R
on PC board with spacing 25mm R
thJA
thJA
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
IF=1A, Tj=175°C V
Reverse current VR=V
VR=V
RRM
, Tj=150°C I
RRM
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
F
F
I
R
R
rr
FSM
FAV
RRM
RRM
RRM
RRM
RRM
RRM
50 V
100 V
150 V
200 V
300 V
400 V
50 A
1.9 A
–65...+175°C
stg
45 K/W
100 K/W
1.1 V
0.9 V
5
200
50 ns
m
A
m
A
Document Number 86030
Rev. 4, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
BYT53.
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
120
100
80
60
ll
40
20
0
thJA
0
R – Therm. Resist. Junction / Ambient ( K/W )
51015 25
l – Lead Length ( mm )94 9552
TL=constant
20
30
Figure 1. Max. Thermal Resistance vs. Lead Length
240
=
BYT53C
BYT53B
BYT53A
VR = V
BYT53G
BYT53F
BYT53D
RRM
220
200
180
160
140
120
100
80
60
40
20
R
P – Reverse Power Dissipation ( mW )
0
25 50 75 100 125 150 175
160K/W
Tj – Junction Temperature ( °C )15770
R
thJA
45K/W
100K/W
Figure 2. Max. Reverse Power Dissipation vs.
Junction Temperature
2.0
1.6
1.2
0.8
0.4
FAV
I – Average Forward Current ( A )
0
R
=100K/W
thJA
PCB: d=25mm
0 20 40 60 80 100 120 140 160 180
T
– Ambient Temperature ( °C )15769
amb
VR=V
RRM
half sinewave
R
=45K/W
thJA
l=10mm
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
10
Tj=175°C
1
Tj=25°C
0.1
0.01
F
I – Forward Current ( A )
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VF – Forward Voltage ( V )15768
Figure 5. Max. Forward Current vs. Forward Voltage
1000
VR = V
RRM
m
100
10
R
I – Reverse Current ( A )
1
25 50 75 100 125 150 175
Tj – Junction Temperature ( °C )15771
Figure 3. Max. Reverse Current vs.
Junction Temperature
www.vishay.de • FaxBack +1-408-970-5600
2 (4)
30
Tj=25°C
24
18
12
D
6
C – Diode Capacitance ( pF )
94 9456
0
0.1 1 10
VR – Reverse Voltage ( V )
100
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
Document Number 86030
Rev. 4, 24-Jun-98
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