Vishay Telefunken BYT52M, BYT52K, BYT52J, BYT52G, BYT52D Datasheet
...
Fast Silicon Mesa Rectifiers
g
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Low reverse current
D
Soft recovery characteristics
BYT52.
Vishay Telefunken
Applications
Fast rectifiers and switches
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BYT52A VR=V
=Repetitive peak reverse voltage
BYT52B VR=V
BYT52D VR=V
BYT52G VR=V
BYT52J VR=V
BYT52K VR=V
BYT52M VR=V
Peak forward surge current tp=10ms,
half sinewave
Average forward current on PC board I
Average forward current l=10mm, TL=25°C I
Junction and storage
Tj=T
temperature range
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=10mm, TL=constant R
on PC board with spacing 25mm R
thJA
thJA
I
FSM
FAV
FAV
RRM
RRM
RRM
RRM
RRM
RRM
RRM
stg
94 9539
50 V
100 V
200 V
400 V
600 V
800 V
1000 V
50 A
0.85 A
1.4 A
–65...+175
45 K/W
100 K/W
°
C
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
Reverse current VR=V
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
Document Number 86029
Rev. 2, 24-Jun-98
VR=V
RRM
, Tj=150°C I
RRM
F
I
R
R
rr
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1.3 V
5
m
150
m
200 ns
1 (4)
A
A
BYT52.
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
120
100
80
60
ll
40
20
0
thJA
0
R – Therm. Resist. Junction / Ambient ( K/W )
51015 25
TL=constant
20
30
l – Lead Length ( mm )94 9552
Figure 1. Max. Thermal Resistance vs. Lead Length
1.2
VR=V
RRM
1.0
0.8
fv1kHz
R
thJA
PC Board
v
100K/W
0.6
0.4
0.2
FAV
I – Average Forward Current ( A )
0
200
94 9447
0 40 80 120 160
T
– Ambient Temperature ( °C )
amb
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
1000
100
m
Scattering Limit
10
1
R
I – Reverse Current ( A )
VR=V
RRM
200
94 9448
0.1
0 40 80 120 160
T
– Junction Temperature ( °C )
j
Figure 4. Reverse Current vs. Junction Temperature
10
Scattering LimitTj=25°C
1
0.1
F
I – Forward Current ( A )
0.01
3.0
94 9449
0 0.6 1.2 1.8 2.4
VF – Forward Voltage ( V )
Figure 5. Forward Current vs. Forward Voltage
2.0
VR=V
1.6
fv1kHz
R
thJA
l=10mm
=45K/W
1.2
0.8
0.4
FAV
I – Average Forward Current ( A )
0
0
40 80 120 160
T
– Ambient Temperature ( °C )94 9446
amb
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
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2 (4)
RRM
200
20
Tj=25°C
16
12
8
D
4
C – Diode Capacitance ( pF )
0
100
94 9451
0.1 1 10
VR – Reverse Voltage ( V )
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
Document Number 86029
Rev. 2, 24-Jun-98
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