Silicon Mesa Rectifier
Features
D
Hermetically sealed axial–leaded
glass envelope
D
Glass passivated
D
Low reverse current
D
High reverse voltage
BYT40Y
Vishay Telefunken
Applications
Electronic ballast and lighting
SMPS
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage=Repetitive peak
reverse voltage
Peak forward surge current tp=8.3ms, half–sinewave I
Average forward current T
Junction and storage temperature
range
=40°C, l = 10 mm I
amb
VR=V
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient lead length l= 10mm, TL = constant R
on PC board with 25mm spacing R
FSM
FAV
Tj=T
thJA
thJA
RRM
stg
95 10526
1600 V
25 A
1 A
–55...+150
60 K/W
110 K/W
°
C
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
Reverse current VR=V
Diode capacitance VR=4.0V, f= 1MHz C
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
Document Number 86023
Rev. 2, 24-Jun-98
VR=V
RRM
, Tj=150°C I
RRM
F
I
R
R
D
rr
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1.3 V
5
m
150
6 pF
2 3
m
m
1 (4)
A
A
s
BYT40Y
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
300
VR = V
RRM
250
200
150
100
50
R
P – Reverse Power Dissipation ( mW )
0
25 50 75 100 125 150
Tj – Junction Temperature ( °C )15779
R
thJA
45K/W
100K/W
160K/W
=
PR–Limit
@80%V
PR–Limit
@100%V
R
R
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1000
VR = V
RRM
m
100
10
R
I – Reverse Current ( A )
1
25 50 75 100 125 150
Tj – Junction Temperature ( °C )15780
Figure 2. Max. Reverse Current vs.
Junction Temperature
10
Tj=150°C
1
Tj=25°C
0.1
0.01
F
I – Forward Current ( A )
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VF – Forward Voltage ( V )15777
Figure 4. Max. Forward Current vs. Forward Voltage
16
14
12
10
8
6
4
D
C – Diode Capacitance ( pF )
2
0
0.1 1.0 10.0 100.0
VR – Reverse Voltage ( V )14362
f=1MHz
Figure 5. Typ. Diode Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
R
=110K/W
0.2
FAV
I – Average Forward Current ( A )
0
thJA
PCB: d=25mm
0 20 40 60 80 100 120 140 160
T
– Ambient Temperature ( °C )15778
amb
VR=V
half sinewave
R
thJA
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
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2 (4)
RRM
=60K/W
l=10mm
120
100
80
60
ll
40
20
TL=constant
20
30
R – Therm. Resist. Junction / Ambient ( K/W )
thJA
0
0
51015 25
l – Lead Length ( mm )96 12151
Figure 6. Max. Thermal Resistance vs. Lead Length
Document Number 86023
Rev. 2, 24-Jul-98