Vishay Telefunken BYT08P800A, BYT08P600A Datasheet
BYT08P/600A/800A
g
Fast Recovery Silicon Power Rectifier
Features
D
Multiple diffusion
D
Low switch on power losses
D
Good soft recovery behaviour
D
Fast forward recovery time
D
Fast reverse recovery time
D
Low reverse current
D
Very low turn on transient peak voltage
D
Very good reverse current stability at high temperature
D
Low thermal resistance
Applications
Fast rectifiers in S.M.P.S
Freewheeling diodes and snubber diodes in motor
control circuits
Vishay Telefunken
14282
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage BYT08P/600A VR=V
=Repetitive peak reverse voltage
Peak forward surge current tp=10ms,
half sinewave
Repetitive peak forward current I
Average forward current I
Junction and storage
temperature range
BYT08P/800A VR=V
Tj=T
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction case R
Junction ambient R
thJC
thJA
I
FSM
FRM
FAV
RRM
RRM
stg
600 V
800 V
50 A
16 A
8 A
–40...+150
2.0 K/W
85 K/W
°
C
Document Number 86017
Rev. 3, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
BYT08P/600A/800A
g
F F
m
y
F
,
F
m
,
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=8A V
IF=8A, Tj=100°C V
Reverse current VR=V
Forward recovery time
Turn on transient peak voltage
Reverse recovery characteristics
Reverse recovery time
Reverse recovery current
Reverse recovery time
RRM
VR=V
I
=8A; di
, Tj=100°C I
RRM
/dtx50A/ms
IF=8A, diF/dtx–32A/ms,
V
=200V, Tj=100°C
Batt
IF=8A, diF/dtx–32A/ms,
V
=200V, Tj=100°C,
Batt
i
=0.25xI
R
RM
IF=0.5A, IR=1A, iR=0.25A t
IF=1A, diF/dtx–50A/ms,
V
=200V
Batt
IF=1A, diF/dtx–50A/ms,
V
=200V, iR=0.25xI
Batt
RM
I
t
V
I
RM
t
IRM
t
I
RM
t
R
R
fr
FP
rr
rr
rr
F
F
1.9 V
1.8 V
35
m
A
2 mA
350 ns
4,5 V
4 A
160 ns
100 ns
50 ns
1.7 A
75 ns
Characteristics (Tj = 25_C unless otherwise specified)
1000
100
m
10
VR=V
RRM
1
R
I – Reverse Current ( A )
0.1
0 40 80 120 160
T
94 9357
Figure 1. Typ. Reverse Current vs. Junction Temperature
– Junction Temperature ( °C )
j
200
10
8
R
=8K/W
thJA
6
10K/W
4
20K/W
2
FAV
I – Average Forward Current ( A )
85K/W
0
0
40 80 120 160
T
– Ambient Temperature ( °C )94 9355
amb
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
R
=2K/W
thJC
200
www.vishay.de • FaxBack +1-408-970-5600
2 (5)
Document Number 86017
Rev. 3, 24-Jun-98
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