Vishay Telefunken BYT08P1000A Datasheet

Fast Recovery Silicon Power Rectifier

Features

D

Multiple diffusion

D

Low switch on power losses

D

Good soft recovery behaviour

D

Fast forward recovery time

D

Low reverse current

D

Very low turn on transient peak voltage

D

Very good reverse current stability at high tem­perature

D

Low thermal resistance

Applications

Fast rectifiers in S.M.P.S
Freewheeling diodes and snubber diodes in motor
control circuits

BYT08P/1000A

Vishay Telefunken

14282

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit

Reverse voltage
=Repetitive peak reverse voltage

Peak forward surge current tp=10ms,

half sinewave
Repetitive peak forward current I
Average forward current I
Junction and storage

temperature range

VR=V

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit
Junction case R
Junction ambient R

I

FSM

FRM

FAV

Tj=T

thJC
thJA

RRM

stg

1000 V

50 A

16 A

8 A

–40...+150

2.0 K/W
85 K/W

°

C

Document Number 86016
Rev. 2, 24-Jun-98

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BYT08P/1000A

g

F

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F

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F

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F

m

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Vishay Telefunken

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward voltage IF=8A V

IF=8A, Tj=100°C V

Reverse current VR=V

Forward recovery time
Turn on transient peak

voltage
Reverse recovery

characteristics
Reverse recovery time

RRM

VR=V
I

=8A, di

, Tj=100°C I

RRM

/dtx50A/ms

IF=8A, diF/dtx–32A/ms,
V

=200V, Tj=100°C

Batt

IF=8A, diF/dtx–32A/ms,
V

=200V, Tj=100°C,

Batt

iR=0.25xI

RM

IF=0.5A, IR=1A, iR=0.25A t

I

t

V

I

RM

t

IRM

t

R
R
fr
FP

rr

rr

F
F

1.9 V

1.8 V
35

m

A

2.5 mA

350 ns

4.5 V

5.5 A

80 200 ns

120 ns

65 ns

Characteristics (Tj = 25_C unless otherwise specified)

1000

100

m

VR=1000V

10

R

I – Reverse Current ( A )

94 9159

1

0.1
0 40 80 120 160

T

VR=800V

– Junction Temperature ( °C )

j

200

Figure 1. Typ. Reverse Current vs. Junction Temperature

10

8

R

=8K/W

thJA

6

10K/W

4

20K/W

2

FAV

I – Average Forward Current ( A )

0

85K/W

0

40 80 120 160

T

– Ambient Temperature ( °C )94 9365

amb

Figure 2. Max. Average Forward Current vs.

Ambient Temperature

R

=2K/W

thJC

200

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Document Number 86016

Rev. 2, 24-Jun-98