Fast Silicon Mesa SMD Rectifier
Features
D
Glass passivated junction
D
Low reverse current
D
High reverse voltage
D
Fast reverse recovery time
D
Wave and reflow solderable
BYG23M
Vishay Telefunken
Applications
Freewheeling diodes in SMPS and converters
Snubber diodes
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage=
Repetitive peak reverse voltage
Peak forward surge current tp=10ms, half sinewave I
Average forward current T
Junction and storage temperature range Tj=T
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
= 65°C I
amb
I
=1A E
(BR)R
VR=
V
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction case R
Junction ambient mounted on epoxy–glass hard tissue,
2
17mm
mounted on epoxy–glass hard tissue,
50mm2 35mm Cu
mounted on Al–oxid–ceramic (Al2O3),
50mm2 35mm Cu
35mm Cu
R
R
R
thJC
thJA
thJA
thJA
RRM
FSM
FAV
R
1000 V
1.5 A
–55...+150
stg
25 K/W
150 K/W
125 K/W
100 K/W
15 811
30 A
°
20 mJ
C
Document Number 86062
Rev. 1, 13-Aug-99
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
BYG23M
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1.0A V
IF=1.0A, TJ = 150°C V
Reverse current VR=V
VR=V
RRM
, Tj=125°C I
RRM
Breakdown voltage IR = 100 mA V
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
Characteristics (Tj = 25_C unless otherwise specified)
F
F
I
R
R
(BR)R
rr
1.7 V
1.35 V
5
m
50
m
1000 V
75 ns
A
A
100
10
Tj=150°C
Tj=25°C
1
F
I – Forward Current ( A )
0.1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VF – Forward Voltage ( V )16096
Figure 1. Max. Forward Current vs. Forward Voltage
1.6
1.4
1.2
R
=
T
amb
thJA
25K/W
125K/W
150K/W
– Ambient Temperature ( °C )16092
1.0
0.8
0.6
0.4
0.2
FAV
I – Average Forward Current ( A )
0
0 25 50 75 100 125 150
VR=V
RRM
half sinewave
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
160
140
120
100
80
60
40
20
R
P – Reverse Power Dissipation ( mW )
0
25 50 75 100 125 150
175K/W
Tj – Junction Temperature ( °C )16094
R
=
thJA
125K/W
VR = V
100%
RRM
80%
Figure 3. Max. Reverse Power Dissipation vs.
Junction Temperature
1000
1000
VR = V
RRM
m
100
100
10
10
R
I – Reverse Current ( A )
1
1
25 50 75 100 125 150
25 50 75 100 125 150
Tj – Junction Temperature ( °C )16095
Figure 4. Max. Reverse Current vs. Junction Temperature
www.vishay.de • FaxBack +1-408-970-5600 Document Number 86062
2 (4) Rev. 3, 09-Aug-99