Vishay Telefunken BYG23M Datasheet

Fast Silicon Mesa SMD Rectifier
Features
Glass passivated junction
Low reverse current
High reverse voltage
Fast reverse recovery time
Wave and reflow solderable
BYG23M
Vishay Telefunken
Applications
Freewheeling diodes in SMPS and converters Snubber diodes
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Reverse voltage= Repetitive peak reverse voltage
Peak forward surge current tp=10ms, half sinewave I Average forward current T Junction and storage temperature range Tj=T Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
= 65°C I
amb
I
=1A E
(BR)R
VR=
V
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit Junction case R Junction ambient mounted on epoxy–glass hard tissue,
2
17mm mounted on epoxy–glass hard tissue,
50mm2 35mm Cu mounted on Al–oxid–ceramic (Al2O3),
50mm2 35mm Cu
35mm Cu
R
R
R
thJC thJA
thJA
thJA
RRM
FSM
FAV
R
1000 V
1.5 A
–55...+150
stg
25 K/W
150 K/W
125 K/W
100 K/W
15 811
30 A
°
20 mJ
C
Document Number 86062 Rev. 1, 13-Aug-99
www.vishay.de FaxBack +1-408-970-5600
1 (4)
BYG23M
g
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1.0A V
IF=1.0A, TJ = 150°C V
Reverse current VR=V
VR=V
RRM
, Tj=125°C I
RRM
Breakdown voltage IR = 100 mA V Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
Characteristics (Tj = 25_C unless otherwise specified)
F F
I
R R
(BR)R
rr
1.7 V
1.35 V 5
m
50
m
1000 V
75 ns
A A
100
10
Tj=150°C
Tj=25°C
1
F
I – Forward Current ( A )
0.1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VF – Forward Voltage ( V )16096
Figure 1. Max. Forward Current vs. Forward Voltage
1.6
1.4
1.2 R
=
T
amb
thJA
25K/W
125K/W
150K/W
– Ambient Temperature ( °C )16092
1.0
0.8
0.6
0.4
0.2
FAV
I – Average Forward Current ( A )
0
0 25 50 75 100 125 150
VR=V
RRM
half sinewave
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
160 140 120 100
80 60 40 20
R
P – Reverse Power Dissipation ( mW )
0
25 50 75 100 125 150
175K/W
Tj – Junction Temperature ( °C )16094
R
=
thJA
125K/W
VR = V
100%
RRM
80%
Figure 3. Max. Reverse Power Dissipation vs.
Junction Temperature
1000
1000
VR = V
RRM
m
100
100
10
10
R
I – Reverse Current ( A )
1
1
25 50 75 100 125 150
25 50 75 100 125 150
Tj – Junction Temperature ( °C )16095
Figure 4. Max. Reverse Current vs. Junction Temperature
www.vishay.de FaxBack +1-408-970-5600 Document Number 86062 2 (4) Rev. 3, 09-Aug-99
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