Silicon Mesa Rectifier
Features
D
Controlled avalanche characteristics
D
Glass passivated junction
D
Hermetically sealed package
D
Low reverse current
D
High surge current capability
BY527
Vishay Telefunken
Applications
General purpose
Absolute Maximum Ratings
Tj = 25_C
Parameters Test Conditions Type Symbol Value Unit
Peak reverse voltage, non repetitive V
Reverse voltage V
Peak forward surge current tp=10ms,
half sinewave
Repetitive peak forward current I
Average forward current ϕ=180
Pulse avalanche peak power Tj=175°C, tp=20ms,
Pulse energy in avalanche mode,
non repe
inductive load switch off
Junction and storage
temperature range
ve
°
half sinus wave
I
i2*t–rating i2*t 8 A2*s
=1A, Tj=175°C E
(BRV)R
Tj=T
RSM
I
FSM
FRM
I
FAV
P
94 9539
1250 V
R
R
R
stg
800 V
50 A
12 A
2 A
1000 W
20 mJ
–55...+175
°
C
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=10mm, TL=constant R
on PC board with spacing 25mm R
Document Number 86007
Rev. 2, 24-Jun-98
thJA
thJA
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45 K/W
100 K/W
1 (4)
BY527
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
IF=10A V
Reverse current VR=800V I
VR=800V, Tj=100°C I
Breakdown voltage IR=100mA, tp/T=0.01,
t
=0.3ms
p
Diode capacitance VR=0, f=0.47MHz C
Reverse recovery time IF=0.5A, IR=1A, iR=0.25A t
IF=1A, di/dt=5A/ms,
VR=50V
Reverse recovery charge IF=1A, di/dt=5A/ms Q
Characteristics (Tj = 25_C unless otherwise specified)
V
F
F
R
R
(BR)
D
rr
t
rr
rr
0.9 1.0 V
1.65 V
0.1 1
5 10
m
m
1250 V
50 pF
4
m
4
m
3
m
A
A
s
s
C
R – Therm. Resist. Junction / Ambient ( K/W )
thJA
120
100
80
60
40
20
0
ll
TL=constant
0
51015 25
l – Lead Length ( mm )94 9101
20
30
Figure 1. Typ. Thermal Resistance vs. Lead Length
1000
100
m
Scattering Limit
10
1.2
1.0
0.8
0.6
0.4
R
=100K/W
FAV
I – Average Forward Current ( A )
94 9163
0.2
0
0 40 80 120 160
thJA
VR=V
T
– Ambient Temperature ( °C )
amb
RRM
PCB
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
2.0
1.6
1.2
200
1
R
I – Reverse Current ( A )
VR=V
RRM
200
94 9176
0.1
0 40 80 120 160
T
– Junction Temperature ( °C )
j
Figure 2. Reverse Current vs. Junction Temperature
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2 (4)
0.8
R
v
45K/W
thJA
0.4
FAV
I – Average Forward Current ( A )
VR=V
RRM
l=12mm
0
0
40 80 120 160
T
– Ambient Temperature ( °C )94 9172
amb
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
Document Number 86007
Rev. 2, 24-Jun-98
200