Vishay Telefunken BPX43-6, BPX43-5, BPX43, BPX43-4 Datasheet
BPX43
Vishay Telefunken
1 (6)
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
Document Number 81534
Silicon NPN Phototransistor
Description
BPX43 is a very high sensitive silicon NPN epitaxial
planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens.
A superior linearity of photocurrent vs. irradiation
makes it ideal for linear applications. A base terminal
is available to enable biasing and sensitivity control.
Features
D
Hermetically sealed TO–18 case
D
Lens window
D
Angle of half sensitivity ϕ = ± 15
°
D
Exact central chip alignment
D
Base terminal available
D
Very high photo sensitivity
D
High linearity
D
Suitable for visible and near infrared radiation
D
Selected into sensitivity groups
94 8402
Applications
Detector for analogue and digital applications in industrial electronics, measuring and control, e.g. long range
light barriers with additional optics, optical switches, alarm systems.
Absolute Maximum Ratings
T
amb
= 25_C
Parameter Test Conditions Symbol Value Unit
Collector Base Voltage V
CBO
80 V
Collector Emitter Voltage V
CEO
70 V
Emitter Base Voltage V
EBO
7 V
Collector Current I
C
50 mA
Peak Collector Current
tp x 10 ms
I
CM
200 mA
Total Power Dissipation
T
amb
x 25 °C
P
tot
250 mW
Junction Temperature T
j
125
°
C
Operating Temperature Range T
op
–55...+125
°
C
Storage Temperature Range T
stg
–55...+125
°
C
Soldering Temperature
t x 5 s, distance from
touching border y 2 mm
T
sd
260
°
C
Thermal Resistance Junction/Ambient R
thJA
400 K/W
Thermal Resistance Junction/Case R
thJC
150 K/W
BPX43
Vishay Telefunken
2 (6) Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
Document Number 81534
Basic Characteristics
T
amb
= 25_C
Parameter Test Conditions Symbol Min Typ Max Unit
Collector Emitter Breakdown
Voltage
IC = 1 mA V
(BR)CE
O
70 V
Collector Dark Current VCE = 25 V, E = 0 I
CEO
10 200 nA
Collector Emitter Capacitance VCE = 0 V, f = 1 MHz, E = 0 C
CEO
23 pF
Emitter Base Capacitance VEB = 0 V, f = 1 MHz, E = 0 C
EBO
47 pF
Collector Base Capacitance VCB = 0 V, f = 1 MHz, E = 0 C
CBO
41 pF
Collector Light Current Ee = 0.5 mW/cm2,
l
= 950 nm, V
CE
= 5 V
I
ca
0.8 mA
Temp. Coefficient of I
ca
l
= 950 nm TK
Ica
1 %/K
Base Light Current Ee = 0.5 mW/cm2,
l
= 950 nm, VCB = 5 V
I
ba
10
m
A
Angle of Half Sensitivity ϕ ±15 deg
Wavelength of Peak Sensitivity
l
p
920 nm
Range of Spectral Bandwidth
l
0.5
630...1040 nm
Collector Emitter Saturation
Voltage
Ee = 0.5 mW/cm2,
l
= 950 nm, IC = 0.1 mA
V
CEsat
0.15 0.3 V
Type Dedicated Characteristics
T
amb
= 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Current Gain VCE= 5 V, BPX38–4 B 330
CE
IC = 1 mA
BPX38–5 B 520
BPX38–6 B 650
Collector Light Current Ee=0.5 mW/cm2, BPX38–4 I
ca
0.5 0.7 1.0 mA
g
e
l
=950nm, VCE=5V
BPX38–5 I
ca
0.8 1.25 1.6 mA
BPX38–6 I
ca
1.25 2 mA
Rise Time/ Fall Time VCE=5V, IC=1mA, BPX38–4 tr, t
f
15
m
s
CE C
RL=1kW l=820nm
BPX38–5 tr, t
f
20
m
s
BPX38–6 tr, t
f
25
m
s
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