Vishay Telefunken BPW97 Datasheet

Silicon PIN Photodiode

Description

BPW97 is an extra high speed PIN photodiode in a
hermetically sealed TO–18 package.
Unlike most similar devices, the cathode terminal is
isolated from case and connected to a third terminal,
giving the user all the means to improve shielding of his
system.
Due to its high precision flat glass window and its accu­rate chip alignment, this device is recommended for
ambitious applications in the optical data transmission
domain.

Features

D

Extra fast response times at low operating volt­ages

D

Exact central chip alignment

D

Chip insulated

D

Shielded construction

D

Hermetically sealed TO–18 case

D

Flat optical window

D

Wide angle of half sensitivity ϕ = ± 55

D

Radiant sensitive area A=0.25mm

D

Suitable for visible and near infrared radiation

D

Suitable for coupling with 50 mm gradient index fi­ber

°

2

BPW97

Vishay Telefunken

94 8478

Applications

Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs emitters.
Detector for optical communication, e.g. for optical fiber transmission systems with only 5 V power supply.

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation
Junction Temperature T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R

Document Number 81533
Rev. 2, 20-May-99

T

x 25 °C

amb

t x 5 s

P

T

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R
V

j

stg

sd

thJA

60 V
285 mW
125

–55...+125

260
350 K/W

°
°
°

C
C
C

1 (6)

BPW97

y

Vishay Telefunken

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 50 mA V
Breakdown Voltage IR = 100 mA, E = 0 V
Reverse Dark Current VR = 50 V, E = 0 I
Diode Capacitance VR = 50 V, f = 1 MHz, E = 0 C
Dark Resistance VR = 10m V, E = 0, f = 0 R
Serial Resistance VR = 50 V, f = 1 MHz R
Reverse Light Current Ee = 1 mW/cm2,

l

= 870 nm, V

= 50 V

R

Ee = 1 mW/cm2,

l

= 950 nm, VR = 50 V

Temp. Coefficient of I

ra

VR = 50 V, l = 870 nm TK

F

(BR)

ro

D
D
S

I

ra

I

ra

Ira

60 V

1.0 1.3

Absolute Spectral Sensitivity VR = 5 V, l = 870 nm s(l) 0.50 A/W

VR = 5 V, l = 950 nm s(l) 0.35 A/W
Angle of Half Sensitivity ϕ ±55 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency

l

= 850 nm

l

p

l

0.5

h

Noise Equivalent Power VR = 50 V, l = 870 nm NEP 3.6x10
Detectivity VR = 50 V, l = 870 nm D

Rise Time VR = 3.8 V, RL = 50 W,

l

= 780 nm

Fall Time VR = 3.8 V, RL = 50 W,

l

= 780 nm

Rise Time VR = 50 V, RL = 50 W,

l

= 820 nm

Fall Time VR = 50 V, RL = 50 W,

l

= 820 nm

Cut–Off Frequency

l

= 820 nm f

*

t

r

t

f

t

r

t

f

c

0.9 1.2 V

1 5 nA

1.7 pF
5 G

180

m

0.9

m

0.2 %/K

810 nm

560...960 nm
80 %

1.4x10

–14

12

W/√ Hz
cm√Hz/

W

1.2 ns

1.2 ns

0.6 ns

0.6 ns

1 GHz

W

W

A

A

www.vishay.de • FaxBack [phone]
2 (6) Rev. 2, 20-May-99

Document Number 81533