Vishay Telefunken BPW85C, BPW85B, BPW85A Datasheet

Silicon NPN Phototransistor

Description

BPW85 is a high speed and high sensitive silicon NPN
epitaxial planar phototransistor in a standard T–1 (ø 3
mm) plastic package. Due to its waterclear epoxy the
device is sensitive to visible and near infrared radi­ation.
The viewing angle of ± 25° makes it insensible to ambi­ent straylight.

Features

D

Fast response times

D

High photo sensitivity

D

Standard T–1 (ø 3 mm ) clear plastic package

D

Axial terminals

D

Angle of half sensitivity ϕ = ± 25

D

Suitable for visible and near infrared radiation

D

Selected into sensitivity groups

°

BPW85

Vishay Telefunken

94 8396

Applications

Detector in electronic control and drive circuits

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage V
Emitter Collector Voltage V
Collector Current I
Peak Collector Current
Total Power Dissipation
Junction Temperature T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R

tp/T = 0.5, tp x 10 ms
T

x 55 °C

amb

t x 3 s, 2 mm from case

CEO
ECO

C

I

CM

P

tot

stg

T

sd

thJA

70 V

5 V

50 mA
100 mA
100 mW

j

100

–55...+100

260
450 K/W

°

C

°

C

°

C

Document Number 81531
Rev. 3, 16-Nov-99

www.vishay.de • FaxBack [phone]

1 (6)

BPW85

g

e

Vishay Telefunken

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit

Collector Emitter Breakdown
Voltage

Collector Dark Current VCE = 20 V, E = 0 I
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E = 0 C
Angle of Half Sensitivity ϕ ±25 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation

Voltage
Turn–On Time VS = 5 V, IC = 5 mA,

Turn–Off Time VS = 5 V, IC = 5 mA,

Cut–Off Frequency VS = 5 V, IC = 5 mA,

IC = 1 mA V

Ee = 1 mW/cm2,

l

= 950 nm, IC = 0.1 mA

RL = 100

RL = 100

RL = 100

W

W

W

(BR)CE

O

CEO

CEO

l

p

l

0.5

V

CEsat

t

on

t

off

f

c

70 V

1 200 nA
3 pF

850 nm

620...980 nm

0.3 V

2.0

2.3

180 kHz

m

s

m

s

Type Dedicated Characteristics

T

= 25_C

amb

Parameter Test Conditions Type Symbol Min Typ Max Unit

Collector Light Current Ee=1mW/cm2, BPW85A I

l

=950nm, VCE=5V

BPW85B I
BPW85C I

Typical Characteristics (T

125

100

75

50

25

tot

P – Total Power Dissipation ( mW )

0

020406080

T

94 8308

Figure 1. Total Power Dissipation vs. Ambient Temperature

– Ambient Temperature ( °C )

amb

= 25_C unless otherwise specified)

amb

4

10

3

10

CEO

I – Collector Dark Current ( nA )

94 8304

2

10

1

10

0

10

R

thJA

100

Figure 2. Collector Dark Current vs. Ambient Temperature

ca
ca
ca

20

0.8 1.5 2.5 mA

1.5 2.5 4.0 mA

3.0 5.0 8.0 mA

VCE=20V

40 60 80

T

– Ambient Temperature ( °C )

amb

100

www.vishay.de • FaxBack [phone]
2 (6) Rev. 3, 16-Nov-99

Document Number 81531