Vishay Telefunken BPW83 Datasheet

Silicon PIN Photodiode

Description

BPW83 is a high speed and high sensitive PIN photo­diode in a flat side view plastic package. The epoxy
package itself is an IR filter, spectrally matched to
GaAs or GaAlAs IR emitters (l
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle.

Features

D

Large radiant sensitive area (A=7.5 mm2)

D

Wide angle of half sensitivity ϕ = ± 65

D

High radiant sensitivity

D

Fast response times

D

Small junction capacitance

D

Plastic case with IR filter

D

Suitable for near infrared radiation

D

Especially for GaAlAs emitters with

y 800 nm).

p

lp=870nm

°

BPW83

Vishay Telefunken

94 8490

Applications

High speed photo detector

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation
Junction Temperature T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R

T

x 25 °C

amb

t x 5 s

P

stg

T

sd

thJA

R
V

j

60 V
215 mW
100

–55...+100

260
350 K/W

°

C

°

C

°

C

Document Number 81530
Rev. 2, 20-May-99

www.vishay.de • FaxBack [phone]

1 (5)

BPW83

Vishay Telefunken

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit
Breakdown Voltage IR = 100 mA, E = 0 V
Reverse Dark Current VR = 10 V, E = 0 I
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C

VR = 3 V, f = 1 MHz, E = 0 C
Open Circuit Voltage Ee = 1 mW/cm2, l = 870 nm V
Short Circuit Current Ee = 1 mW/cm2, l = 870 nm I
Reverse Light Current Ee = 1 mW/cm2,

l

= 870 nm, VR = 5 V

(BR)

ro

D
D
o

k

I

ra

Angle of Half Sensitivity ϕ ±65 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth

l

p

l

0.5

Noise Equivalent Power VR = 10 V, l = 870 nm NEP 4x10
Rise Time VR = 10 V, RL = 1k W,

l

= 820 nm

Fall Time VR = 10 V, RL = 1k W,

l

= 820 nm

t

r

t

f

60 V

2 30 nA
70 pF
25 40 pF

350 mV

38

43 45

m
m

950 nm

790...1050 nm

–14

W/√ Hz

100 ns

100 ns

A
A

Typical Characteristics (T

1000

100

10

ro

I – Reverse Dark Current ( nA )

1

20 40 60 80

T

94 8403

Figure 1. Reverse Dark Current vs. Ambient Temperature

– Ambient Temperature ( °C )

amb

VR=10V

= 25_C unless otherwise specified)

amb

100

1.4

1.2

1.0

0.8

ra rel

I – Relative Reverse Light Current

0.6
020406080

T

94 8409

Figure 2. Relative Reverse Light Current vs.

– Ambient Temperature ( °C )

amb

Ambient Temperature

VR=5V

l

=950nm

100

www.vishay.de • FaxBack [phone]
2 (5) Rev. 2, 20-May-99

Document Number 81530