Vishay Telefunken BPW78B, BPW78A Datasheet

Silicon NPN Phototransistor

Description

BPW78 is a high sensitive silicon NPN epitaxial planar
phototransistor in a flat side view plastic package.
A small recessed lens provides a high sensitivity in a
low profile case.
The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs on GaAlAs IR emitters
(

l

> 850nm).

p

Features

D

Plastic case with IR filter

D

Suitable for near infrared radiation

D

High radiant sensitivity

D

Super flat sideview case with spherical lens

D

Lens integrated

D

Irradiation direction vertical to mounting direction

D

Angle of half sensitivity ϕ = ± 25

D

Selected into sensitivity groups

D

Compatibel with CQX48

°

BPW78

Vishay Telefunken

94 8487

Applications

Detector in electronic control and drive circuits

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage V
Emitter Collector Voltage V
Collector Current I
Peak Collector Current
Total Power Dissipation
Junction Temperature T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R

tp/T = 0.5, tp x 10 ms
T

x 40 °C

amb

t x 5 s

CEO
ECO

C

I

CM

P

tot

stg

T

sd

thJA

32 V

5 V
100 mA
200 mA
150 mW

j

100

–55...+100

260
400 K/W

°

C

°

C

°

C

Document Number 81528
Rev. 2, 20-May-99

www.vishay.de • FaxBack [phone]

1 (5)

BPW78

E

mW/cm

2

Vishay Telefunken

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit

Collector Emitter Breakdown
Voltage

Emitter Collector Breakdown
Voltage

Collector Dark Current VCE = 20 V, E = 0 I
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E = 0 C
Angle of Half Sensitivity ϕ ±25 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation

Voltage
Turn–On Time VS = 5 V, IC = 5 mA,

Turn–Off Time VS = 5 V, IC = 5 mA,

Cut–Off Frequency VS = 5 V, IC = 5 mA,

IC = 1 mA V

IE = 100 mA V

Ee = 1 mW/cm2,

l

= 950 nm, IC = 0.1 mA

RL = 100

RL = 100

R

= 100

L

W

W

W

(BR)CE

O

(BR)EC

O

CEO

CEO

l

p

l

0.5

V

CEsat

t

on

t

off

f

c

32 V

5 V

1 100 nA
6 pF

920 nm

850...980 nm

0.3 V

6

5

110 kHz

m

s

m

s

Type Dedicated Characteristics

T

= 25_C

amb

Parameter Test Conditions Type Symbol Min Typ Max Unit

Collector Light Current VCE=5 V,

=1

e

l

=950 nm

p

Typical Characteristics (T

200

160

120

R

thJA

80

40

tot

P – Total Power Dissipation ( mW )

0

020406080

T

94 8259

Figure 1. Total Power Dissipation vs.

– Ambient Temperature ( °C )

amb

Ambient Temperature

,

amb

100

BPW78A I
BPW78B I

ca
ca

1 2 3 mA
2 4 mA

= 25_C unless otherwise specified)

4

10

3

10

2

10

1

10

CEO

I – Collector Dark Current ( nA )

0

10

20

94 8249

Figure 2. Collector Dark Current vs. Ambient Temperature

VCE=10V

40 60 80

T

– Ambient Temperature ( °C )

amb

100

www.vishay.de • FaxBack [phone]
2 (5) Rev. 2, 20-May-99

Document Number 81528