Vishay Telefunken BPW77NB, BPW77NA Datasheet
Silicon NPN Phototransistor
Description
BPW77N is a very high sensitive silicon NPN epitaxial
planar phototransistor in a standard TO–18 hermetically sealed metal case.
Its glass lens featuring a viewing angle of ±10° makes
it insensible to ambient straylight.
A base terminal is available to enable biasing and sensitivity control.
Features
D
Hermetically sealed case
D
Lens window
D
Narrow viewing angle ϕ = ± 10
D
Exact central chip alignment
D
Base terminal available
D
High photo sensitivity
D
Suitable for visible and near infrared radiation
D
Selected into sensitivity groups
°
BPW77N
Vishay Telefunken
94 8486
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Collector Base Voltage V
Collector Emitter Voltage V
Emitter Base Voltage V
Collector Current I
Peak Collector Current
Total Power Dissipation
Junction Temperature T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
Thermal Resistance Junction/Case R
tp/T = 0.5, tp x 10 ms
T
x 25 °C
amb
t x 5 s
CBO
CEO
EBO
C
I
CM
P
tot
stg
T
sd
thJA
thJC
80 V
70 V
5 V
50 mA
100 mA
250 mW
j
125
–55...+125
260
°
C
°
C
°
C
400 K/W
150 K/W
Document Number 81527
Rev. 2, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
BPW77N
g
e
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector Emitter Breakdown
Voltage
Collector Dark Current VCE = 20 V, E = 0 I
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E = 0 C
Angle of Half Sensitivity ϕ ±10 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time VS = 5 V, IC = 5 mA,
Turn–Off Time VS = 5 V, IC = 5 mA,
Cut–Off Frequency VS = 5 V, IC = 5 mA,
IC = 1 mA V
Ee = 1 mW/cm2,
l
= 950 nm, IC = 1 mA
RL = 100
RL = 100
RL = 100
W
W
W
(BR)CE
O
CEO
CEO
l
p
l
0.5
V
CEsat
t
on
t
off
f
c
70 V
1 100 nA
6 pF
850 nm
620...980 nm
0.15 0.3 V
6
5
110 kHz
m
s
m
s
Type Dedicated Characteristics
T
= 25_C
amb
Parameter Test Conditions Type Symbol Min Typ Max Unit
Collector Light Current Ee=1mW/cm2, BPW77NA I
l
=950nm, VCE=5V
Typical Characteristics (T
800
600
R
thJC
tot
P – Total Power Dissipation ( mW )
94 8342
400
200
0
Figure 1. Total Power Dissipation vs.
R
thJA
0 25 50 75 100
T
– Ambient Temperature ( °C )
amb
Ambient Temperature
amb
125
BPW77NB I
= 25_C unless otherwise specified)
6
10
5
10
4
10
3
10
2
10
1
CEO
10
I – Collector Dark Current ( nA )
0
150
Figure 2. Collector Dark Current vs. Ambient Temperature
10
94 8343
ca
ca
20
7.5 10 15 mA
10 20 mA
VCE=20V
E=0
50 100
T
– Ambient Temperature ( °C )
amb
150
www.vishay.de • FaxBack +1-408-970-5600
2 (6) Rev. 2, 20-May-99
Document Number 81527
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