Vishay Telefunken BPW24R Datasheet

Silicon PIN Photodiode

Description

BPW24R is a high sensitive silicon planar photodiode
in a standard TO–18 hermetically sealed metal case
with a glass lens.
A precise alignment of the chip gives a good coinci­dence of mechanical and optical axes. The device
features a low capacitance and high speed even at low
supply voltages.

Features

D

Hermetically sealed TO–18 case

D

Exact central chip alignment

D

Cathode connected to case

D

Angle of half sensitivity ϕ = ± 12

D

Extra fast response times at low operating volt­ages

D

High photo sensitivity

D

Radiant sensitive area A=0.78 mm

D

Suitable for visible and near infrared radiation

D

For photodiode and photovoltaic cell operation

°

2

BPW24R

Vishay Telefunken

94 8642

Applications

High speed photo detector

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R

T

x 25 °C

amb

t x 5 s

P

amb

stg

T

sd

thJA

R
V

j

60 V
210 mW
125

–55...+125
–55...+125

260
350 K/W

°

C

°

C

°

C

°

C

Document Number 81520
Rev. 2, 20-May-99

www.vishay.de • FaxBack [phone]

1 (5)

BPW24R

y

Vishay Telefunken

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit
Breakdown Voltage IR = 100 mA, E = 0 V
Reverse Dark Current VR = 50 V, E = 0 I
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C

VR = 5 V, f = 1 MHz, E = 0 C

VR = 20 V, f = 1 MHz, E = 0 C
Open Circuit Voltage Ee = 1 mW/cm2, l = 950 nm V
Temp. Coefficient of V

o

Ee = 1 mW/cm2, l = 950 nm TK
Short Circuit Current Ee = 1 mW/cm2, l = 950 nm I
Temp. Coefficient of I

k

EA = 1 klx TK
Reverse Light Current Ee = 1 mW/cm2,

l

= 950 nm, VR = 20 V

(BR)

ro

D
D
D
o

k

I

ra

Absolute Spectral Sensitivity VR = 5 V, l = 870 nm s(l) 0.60 A/W

VR = 5 V, l = 900 nm s(l) 0.55 A/W
Angle of Half Sensitivity ϕ ±12 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Rise Time VR = 20 V, RL = 50 W,

l

= 820 nm

Fall Time VR = 20 V, RL = 50 W,

l

= 820 nm

l

p

l

0.5

t

r

t

f

60 200 V

2 10 nA

11 pF

3.8 pF

2.5 pF

450 mV

Vo

–2 mV/K
55

Ik

0.1 %/K

45 60

900 nm

600...1050 nm
7 ns

7 ns

m

m

A

A

Typical Characteristics (T

4

10

3

10

2

10

1

10

ro

I – Reverse Dark Current ( nA )

0

10

94 8454

Figure 1. Reverse Dark Current vs. Ambient Temperature

VR=50V

40 60 80

T

– Ambient Temperature ( °C )

amb

10020

= 25_C unless otherwise specified)

amb

120

1.4

1.2

1.0

0.8

ra rel

I – Relative Reverse Light Current

0.6
020406080

T

94 8409

Figure 2. Relative Reverse Light Current vs.

– Ambient Temperature ( °C )

amb

Ambient Temperature

VR=5V

l

=950nm

100

www.vishay.de • FaxBack [phone]
2 (5) Rev. 2, 20-May-99

Document Number 81520