Vishay Telefunken BPW21R Datasheet

Silicon PN Photodiode
Description
Features
BPW21R
Vishay Telefunken
94 8394
D
Hermetically sealed TO–5 case
D
Flat glass window with built–in color correction fil­ter for visible radiation
D
Cathode connected to case
D
Wide viewing angle ϕ = ± 50
D
Large radiant sensitive area (A=7.5 mm2)
D
Suitable for visible radiation
D
High sensitivity
D
Low dark current
D
High shunt resistance
D
Excellent linearity
D
For photodiode and photovoltaic cell operation
°
Applications
Sensor in exposure and color measuring purposes
Document Number 81519 Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)
BPW21R
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit Reverse Voltage V Power Dissipation
T
amb
x 50 °C Junction Temperature T Operating Temperature Range T Storage Temperature Range T Soldering Temperature
t x 5 s
Thermal Resistance Junction/Ambient R
P
amb
stg
T
sd
thJA
R V
j
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit Forward Voltage IF = 50 mA V Breakdown Voltage IR = 20 mA, E = 0 V Reverse Dark Current VR = 5 V, E = 0 I Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C
VR = 5 V, f = 1 MHz, E = 0 C Dark Resistance VR = 10 mV R Open Circuit Voltage EA = 1 klx V Temp. Coefficient of V
o
EA = 1 klx TK Short Circuit Current EA = 1 klx I Temp. Coefficient of I
k
EA = 1 klx TK Reverse Light Current EA = 1 klx, VR = 5 V I Sensitivity VR = 5 V, EA = 10–2...105 lx S 9 nA/lx Angle of Half Sensitivity ϕ ±50 deg Wavelength of Peak Sensitivity Range of Spectral Bandwidth Rise Time VR = 0 V, RL = 1k W,
l
= 660 nm
Fall Time VR = 0 V, RL = 1k W,
l
= 660 nm
(BR)
l
l
0.5
t
t
F
10 V
ro
D D D
280 450 mV
o
Vo
k
ra
4.5 9
lk
4.5 9
p
400 pF
–0.05 %/K
565 nm
420...675 nm
r
f
10 V 300 mW 125
–55...+125 –55...+125
260
° ° ° °
250 K/W
1.0 1.3 V
2 30 nA
1.2 nF
38 G
–2 mV/K
m
m
3.1
3.0
m
m
C C C C
W
A
A
s
s
www.vishay.de FaxBack +1-408-970-5600 2 (5) Rev. 2, 20-May-99
Document Number 81519
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