Vishay Telefunken BPW16N Datasheet

Silicon NPN Phototransistor

Description

BPW16N is a silicon NPN epitaxial planar photo­transistor in a miniature plastic case with flat window.
With a lead center to center spacing of 2.54mm and a
package width of 2.4mm the devices are easily stack­able on PC boards and assembled to arrays of
unlimited size.
Due to its waterclear epoxy the device is sensitive to
visible and near infrared radiation.

Features

D

Miniature T–¾ flat clear plastic package

D

Very wide viewing angle ϕ = ± 40

D

Suitable for 0.1” (2.54 mm) center to center spac­ing

D

Suitable for visible and near infrared radiation

D

Compatible with IR diode CQY36N

°

BPW16N

Vishay Telefunken

94 8638

Applications

Detector in electronic control and drive circuits

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Collector Emitter Voltage V
Emitter Collector Voltage V
Collector Current I
Peak Collector Current
Total Power Dissipation
Junction Temperature T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R

tp/T = 0.5, tp x 10 ms
T

x 55 °C

amb

t x 3 s

CEO
ECO

C

I

CM

P

tot

stg

T

sd

thJA

32 V

5 V

50 mA
100 mA
100 mW

j

100

–55...+100

260
450 K/W

°

C

°

C

°

C

Document Number 81515
Rev. 2, 20-May-99

www.vishay.de • FaxBack [phone]

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BPW16N

Vishay Telefunken

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit

Collector Emitter Breakdown
Voltage

Collector Dark Current VCE = 20 V, E = 0 I
Collector Emitter Capacitance VCE = 5 V, f = 1 MHz, E = 0 C
Collector Light Current Ee = 1 mW/cm2,

Angle of Half Sensitivity ϕ ±40 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation

Voltage
Turn–On Time VS = 5 V, IC = 5 mA,

Turn–Off Time VS = 5 V, IC = 5 mA,

Cut–Off Frequency VS = 5 V, IC = 5 mA,

IC = 1 mA V

l

= 950 nm, VCE = 5 V

Ee = 1 mW/cm2,

l

= 950 nm, IC = 0.01 mA

RL = 100

RL = 100

R

= 100

L

W

W

W

(BR)CE

O

CEO

CEO

I

ca

l

p

l

0.5

V

CEsat

t

on

t

off

f

c

32 V

1 200 nA
8 pF

0.07 0.14 mA

825 nm

620...960 nm

0.3 V

4.8

5.0

120 kHz

m

s

m

s

Typical Characteristics (T

125

100

75

50

25

tot

P – Total Power Dissipation ( mW )

0

020406080

T

94 8308

Figure 1. Total Power Dissipation vs.

– Ambient Temperature ( °C )

amb

Ambient Temperature

= 25_C unless otherwise specified)

amb

4

10

3

10

CEO

I – Collector Dark Current ( nA )

94 8235

2

10

1

10

0

10

20

40 60 80

T

– Ambient Temperature ( °C )

amb

R

thJA

100

Figure 2. Collector Dark Current vs. Ambient Temperature

VCE=20V

100

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Document Number 81515