Vishay Telefunken BPV23NFL, BPV23NF Datasheet

Silicon PIN Photodiode

Description

BPV23NF(L) is a high speed and high sensitive PIN
photodiode in a plastic package with a spherical side
view lens.
The epoxy package itself is an IR filter, spectrally
matched to GaAs on GaAs and GaAlAs on GaAlAs IR
emitters (l
Lens radius and chip position are perfectly matched to
the chip size, giving high sensitivity without
compromising the viewing angle.
In comparison with flat packages the spherical lens
package achieves a sensitivity improvement of 80%.

Features

D

Large radiant sensitive area (A = 5.7 mm2)

D

Wide viewing angle ϕ = ± 60

D

Improved sensitivity

D

Fast response times

D

Low junction capacitance

D

Plastic package with universal IR filter

D

Option ”L”: long lead package optional available
with suffix ”L”; e.g.: BPV23FL

= 950 nm, s

p

(l = 875 nm) > 90 %).

rel

°

BPV23NF(L)

Vishay Telefunken

94 8633

Applications

Infrared remote control and free air transmission systems in combination with IR emitter diodes
(TSU.–, TSI.–, or TSH.–Series). High sensitivity detector for high data rate transmission systems.
The IR filter matches perfectly to the high speed infrared emitters in the 830 nm to 880 nm wavelength range.

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation T
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t x 5 s T
Thermal Resistance Junction/Ambient R

x 25 °C P

amb

R
V

j

amb

stg

sd

thJA

60 V
215 mW
100

–55...+100
–55...+100

260
350 K/W

°

C

°

C

°

C

°

C

Document Number 81513
Rev. 3, 16-Nov-99

www.vishay.de • FaxBack [phone]

1 (6)

BPV23NF(L)

y

Vishay Telefunken

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 50 mA V
Breakdown Voltage IR = 100 mA, E = 0 V
Reverse Dark Current VR = 10 V, E = 0 I
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Serial Resistance VR = 12 V, f = 1 MHz R
Open Circuit Voltage Ee = 1 mW/cm2, l = 950 nm V
Temp. Coefficient of V

o

Ee = 1 mW/cm2, l = 950 nm TK
Short Circuit Current Ee = 1 mW/cm2, l = 950 nm I
Reverse Light Current Ee = 1 mW/cm2,

l

= 870 nm, VR = 5 V

Temp. Coefficient of I

ra

Ee = 1 mW/cm2,

l

= 950 nm, VR = 10 V

TK

F

(BR)

ro

D
S
o

Vo

k

I

ra

Ira

60 V

45 65

Absolute Spectral Sensitivity VR = 5 V, l = 870 nm s(l) 0.57 A/W

VR = 5 V, l = 950 nm s(l) 0.60 A/W
Angle of Half Sensitivity ϕ ±60 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency

l

= 950 nm

l

p

l

0.5

h

Noise Equivalent Power VR = 10 V, l = 950 nm NEP 4x10
Detectivity VR = 10 V, l = 950 nm D

Rise Time VR = 10 V, RL = 1k W,

l

= 820 nm

Fall Time VR = 10 V, RL = 1k W,

l

= 820 nm

Cut–Off Frequency VR = 12 V, RL = 1k W,

l

= 870 nm

VR = 12 V, RL = 1k W,

l

= 950 nm

*

t

r

t

f

f

c

f

c

1 1.3 V

2 30 nA

48 pF
900
390 mV

–2.6 mV/K

65

m
m

0.1 %/K

940 nm

790...1050 nm
90 %

5x10

–14

12

W/√ Hz
cm√Hz/

W

70 ns

70 ns

4 MHz

1 MHz

W

A
A

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2 (6) Rev. 3, 16-Nov-99

Document Number 81513