Vishay Telefunken BPV23F, BPV23FL Datasheet
Silicon PIN Photodiode
Description
BPV23F(L) is a high speed and high sensitive PIN
photodiode in a plastic package with a spherical side
view lens. The epoxy package itself is an IR filter,
spectrally matched to GaAs or GaAs/GaAlAs IR emitters (l
Lens radius and chip position are perfectly matched to
the chip size, giving high sensitivity without compromising the viewing angle.
In comparison with flat packages the lens package
achieves a sensitivity improvement of 80%.
Features
D
D
D
D
D
D
D
D
= 950 nm)
p
Large radiant sensitive area (A = 5.7 mm2)
Wide viewing angle ϕ = ± 60
Improved sensitivity
Fast response times
Low junction capacitance
Plastic package with IR filter
Filter designed for 950 nm transmission
Option ”L”: long lead package optional available
with suffix ”L”; e.g.: BPV23FL
°
BPV23F(L)
Vishay Telefunken
94 8633
Applications
Infrared remote control and free air transmission systems in combination with IR emitter diodes
(TSU...– or TSI...–Series).
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation T
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature t x 5 s T
Thermal Resistance Junction/Ambient R
x 25 °C P
amb
R
V
j
amb
stg
sd
thJA
60 V
215 mW
100
–55...+100
–55...+100
260
350 K/W
°
C
°
C
°
C
°
C
Document Number 81510
Rev. 3, 16-Nov-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
BPV23F(L)
y
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 50 mA V
Breakdown Voltage IR = 100 mA, E = 0 V
Reverse Dark Current VR = 10 V, E = 0 I
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Serial Resistance VR = 12 V, f = 1 MHz R
Open Circuit Voltage Ee = 1 mW/cm2, l = 950 nm V
Temp. Coefficient of V
o
Ee = 1 mW/cm2, l = 950 nm TK
Short Circuit Current Ee = 1 mW/cm2, l = 950 nm I
Reverse Light Current Ee = 1 mW/cm2,
l
= 950 nm, VR = 5 V
Temp. Coefficient of I
ra
Ee = 1 mW/cm2,
l
= 950 nm, VR = 10 V
TK
F
(BR)
ro
D
S
o
Vo
k
I
ra
Ira
60 V
45 63
Absolute Spectral Sensitivity VR = 5 V, l = 870 nm s(l) 0.35 A/W
VR = 5 V, l = 950 nm s(l) 0.6 A/W
Angle of Half Sensitivity ϕ ±60 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
l
= 950 nm
l
p
l
0.5
h
Noise Equivalent Power VR = 10 V, l = 950 nm NEP 4x10
Detectivity VR = 10 V, l = 950 nm D
Rise Time VR = 10 V, RL = 1k W,
l
= 820 nm
Fall Time VR = 10 V, RL = 1k W,
l
= 820 nm
Cut–Off Frequency VR = 12 V, RL = 1k W,
l
= 870 nm
VR = 12 V, RL = 1k W,
l
= 950 nm
*
t
r
t
f
f
c
f
c
1 1.3 V
2 30 nA
48 pF
900
390 mV
–2.6 mV/K
60
m
m
0.2 %/K
950 nm
870...1050 nm
90 %
5x10
–14
12
W/√ Hz
cm√Hz/
W
70 ns
70 ns
4 MHz
1 MHz
W
A
A
www.vishay.de • FaxBack +1-408-970-5600
2 (6) Rev. 3, 16-Nov-99
Document Number 81510
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