Vishay Telefunken BPV22F Datasheet

Silicon PIN Photodiode

Description

BPV22F is a high speed and high sensitive PIN photo­diode in a plastic package with a spherical side
view lens. The epoxy package itself is an IR filter,spec­trally matched to GaAs or GaAs/GaAlAs IR emitters
(l

= 950 nm).

p

Lens radius and chip position are perfectly matched to
the chip size, giving high sensitivity without compro­mising the viewing angle.
In comparison with flat packages the spherical lens
package achieves a sensitivity improvement of 80%.

BPV22F

Vishay Telefunken

Features

D

Large radiant sensitive area (A=7.5 mm2)

D

Wide viewing angle ϕ = ± 60

D

Improved sensitivity

D

Fast response times

D

Plastic package with IR filter

D

Filter designed for 950 nm transmission

°

94 8633

Applications

Infrared remote control and free air transmission systems in combination with IR emitter diodes (TSU...– or
TSI...–Series).

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation
Junction Temperature T
Operating Temperature Range T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R

T

x 25 °C

amb

t x 5 s

P

T

R
V

j

amb

stg

sd

thJA

60 V
215 mW
100

–55...+100
–55...+100

260
350 K/W

°

C

°

C

°

C

°

C

Document Number 81508
Rev. 2, 20-May-99

www.vishay.de • FaxBack [phone]

1 (5)

BPV22F

y

Vishay Telefunken

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 50 mA V
Breakdown Voltage IR = 100 mA, E = 0 V
Reverse Dark Current VR = 10 V, E = 0 I
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C
Serial Resistance VR = 12 V, f = 1 MHz R
Open Circuit Voltage Ee = 1 mW/cm2, l = 950 nm V
Temp. Coefficient of V

o

Ee = 1 mW/cm2, l = 950 nm TK
Short Circuit Current Ee = 1 mW/cm2, l = 950 nm I
Reverse Light Current Ee = 1 mW/cm2,

l

= 950 nm, VR = 5 V

Temp. Coefficient of I

ra

Ee = 1 mW/cm2,

l

= 950 nm, VR = 10 V

TK

F

(BR)

ro

D
S
o

Vo

k

I

ra

Ira

60 V

55 80

Absolute Spectral Sensitivity VR = 5 V, l = 870 nm s(l) 0.35 A/W

VR = 5 V, l = 950 nm s(l) 0.6 A/W
Angle of Half Sensitivity ϕ ±60 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency

l

= 950 nm

l

p

l

0.5

h

Noise Equivalent Power VR = 10 V, l = 950 nm NEP 4 x 10
Detectivity VR = 10 V, l = 950 nm D

Rise Time VR = 10 V, RL = 1k W,

l

= 820 nm

Fall Time VR = 10 V, RL = 1k W,

l

= 820 nm

Cut–Off Frequency VR = 12 V, RL = 1k W,

l

= 870 nm

VR = 12 V, RL = 1k W,

l

= 950 nm

*

t

r

t

f

f

c

f

c

1 1.3 V

2 30 nA

70 pF
400
370 mV

–2.6 mV/K

75

m
m

0.1 %/K

950 nm

870...1050 nm
90 %

6x10

–14

12

W/√ Hz
cm√Hz/

W

100 ns

100 ns

4 MHz

1 MHz

W

A
A

www.vishay.de • FaxBack [phone]
2 (5) Rev. 2, 20-May-99

Document Number 81508