Vishay Telefunken BPV21FL, BPV21F Datasheet

Silicon PIN Photodiode
Description
= 950 nm).
p
Features
D
Large radiant sensitive area (A = 5.7 mm2)
D
Wide viewing angle ϕ = ± 65
D
Fast response times
D
Low junction capacitance
D
TO–92 plastic package with IR filter
D
Filter designed for 950 nm transmission
D
Option ”L”: long lead package optional available with suffix ”L”; e.g.: BPV23FL
°
BPV21F(L)
Vishay Telefunken
94 8387
Applications
Infrared remote control and free air transmission systems in combination with IR emitter diodes (TSU...– or TSI...–Series).
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit Reverse Voltage V Power Dissipation T Junction Temperature T Operating Temperature Range T Storage Temperature Range T Soldering Temperature t x 5 s T Thermal Resistance Junction/Ambient R
x 25 °C P
amb
R V
j
amb
stg
sd
thJA
60 V 215 mW 100
–55...+100 –55...+100
260 350 K/W
°
C
°
C
°
C
°
C
Document Number 81507 Rev. 3, 16-Nov-99
www.vishay.de FaxBack +1-408-970-5600
1 (7)
BPV21F(L)
y
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit Forward Voltage IF = 50 mA V Breakdown Voltage IR = 100 mA, E = 0 V Reverse Dark Current VR = 10 V, E = 0 I Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C Serial Resistance VR = 12 V, f = 1 MHz R Open Circuit Voltage Ee = 1 mW/cm2, l = 950 nm V Temp. Coefficient of V
o
Ee = 1 mW/cm2, l = 950 nm TK Short Circuit Current Ee = 1 mW/cm2, l = 950 nm I Reverse Light Current Ee = 1 mW/cm2,
l
= 950 nm, VR = 5 V
Temp. Coefficient of I
ra
Ee = 1 mW/cm2,
l
= 950 nm, VR = 10 V
TK
F
(BR)
ro
D S o
Vo
k
I
ra
Ira
60 V
27 38
Absolute Spectral Sensitivity VR = 5 V, l = 870 nm s(l) 0.35 A/W
VR = 5 V, l = 950 nm s(l) 0.6 A/W Angle of Half Sensitivity ϕ ±65 deg Wavelength of Peak Sensitivity Range of Spectral Bandwidth Quantum Efficiency
l
= 950 nm
l
p
l
0.5
h
Noise Equivalent Power VR = 10 V, l = 950 nm NEP 4x10 Detectivity VR = 10 V, l = 950 nm D
Rise Time VR = 10 V, RL = 1k W,
l
= 820 nm
Fall Time VR = 10 V, RL = 1k W,
l
= 820 nm
Cut–Off Frequency VR = 12 V, RL = 1k W,
l
= 870 nm
VR = 12 V, RL = 1k W,
l
= 950 nm
*
t
r
t
f
f
c
f
c
1 1.3 V
2 30 nA
48 pF 900 380 mV
–2.6 mV/K
35
m m
0.1 %/K
950 nm
870...1050 nm 90 %
5x10
–14
12
W/ Hz cmHz/
W
70 ns
70 ns
4 MHz
1 MHz
W
A A
www.vishay.de FaxBack +1-408-970-5600 2 (7) Rev. 3, 16-Nov-99
Document Number 81507
BPV21F(L)
Vishay Telefunken
Typical Characteristics (T
1000
100
10
ro
I – Reverse Dark Current ( nA )
94 8403
1
20 40 60 80
T
– Ambient Temperature ( °C )
amb
VR=10V
= 25_C unless otherwise specified)
amb
100
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.4
1.2
1.0
VR=5V
l
=950nm
m
ra
I – Reverse Light Current ( A )
94 8422
100
10
1
l
=950nm
1mW/cm
0.5mW/cm
0.2mW/cm
0.1mW/cm
0.05mW/cm
0.1 1 10 V
– Reverse Voltage ( V )
R
2
2
2
2
2
100
Figure 4. Reverse Light Current vs. Reverse Voltage
80
60
40
E=0
f=1MHz
0.8
ra rel
I – Relative Reverse Light Current
0.6 020406080
T
94 8409
– Ambient Temperature ( °C )
amb
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
1000
m
100
10
1
ra
I – Reverse Light Current ( A )
0.1
0.01 0.1 1
94 8421
Ee – Irradiance ( mW/cm2 )
VR=5V
l
=950nm
Figure 3. Reverse Light Current vs. Irradiance
100
10
20
D
C – Diode Capacitance ( pF )
94 8423
0
0.1 1 10 VR – Reverse Voltage ( V )
100
Figure 5. Diode Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
rel
0.2
l
S ( ) – Relative Spectral Sensitivity
94 8408
0
750 850 950 1050
l
– Wavelength ( nm )
1150
Figure 6. Relative Spectral Sensitivity vs. Wavelength
Document Number 81507 Rev. 3, 16-Nov-99
www.vishay.de FaxBack +1-408-970-5600
3 (7)
Loading...
+ 4 hidden pages