Silicon NPN Phototransistor
Description
BPV11F is a very high sensitive silicon NPN
epitaxial planar phototransistor in a standard
T–1¾ plastic package.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters (l
The viewing angle of ± 15° makes it insensible to
ambient straylight.
A base terminal is available to enable biasing and
sensitivity control.
y 900nm).
p
BPV11F
Vishay Telefunken
Features
D
Very high radiant sensitivity
D
Standard T–1¾ (ø 5 mm) package
D
IR filter for GaAs emitters (950 nm)
D
Angle of half sensitivity ϕ = ± 15
D
Base terminal available
°
12784
Applications
Detector for industrial electronic circuitry, measurement and control
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit
Collector Base Voltage V
Collector Emitter Voltage V
Emitter Base Voltage V
Collector Current I
Peak Collector Current
Total Power Dissipation
Junction Temperature T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R
tp/T = 0.5, tp x 10 ms
T
x 47 °C
amb
t x 5 s, 2 mm from body
CBO
CEO
EBO
C
I
CM
P
tot
stg
T
sd
thJA
80 V
70 V
5 V
50 mA
100 mA
150 mW
j
100
–55...+100
260
°
C
°
C
°
C
350 K/W
Document Number 81505
Rev. 3, 20-May-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
BPV11F
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector Emitter Breakdown
Voltage
Collector Dark Current VCE = 10 V, E = 0 I
DC Current Gain VCE = 5 V, IC = 5 mA, E = 0 h
Collector Emitter Capacitance VCE = 0 V, f = 1 MHz, E=0 C
Collector Base Capacitance VCB = 0 V, f = 1 MHz, E=0 C
Collector Light Current Ee=1 mW/cm2, l=950 nm,
Angle of Half Sensitivity ϕ ±15 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time VS=5 V, IC=5 mA,
Turn–Off Time VS=5 V, IC=5 mA,
Cut–Off Frequency VS=5 V, IC=5 mA,
IC = 1 mA V
V
=5 V
CE
Ee=1 mW/cm2, l=950 nm,
IC=1 mA
R
=100
=100
W
W
W
L
R
L
RL=100
(BR)CE
O
CEO
FE
CEO
CBO
I
ca
l
p
l
0.5
V
CEsat
t
on
t
off
f
c
70 V
1 50 nA
450
15 pF
19 pF
3 9 mA
930 nm
900...980 nm
130 300 mV
6
5
110 kHz
m
s
m
s
Typical Characteristics (T
200
160
120
R
thJA
80
40
tot
P – Total Power Dissipation ( mW )
0
020406080
T
94 8300
Figure 1. Total Power Dissipation vs.
– Ambient Temperature ( °C )
amb
Ambient Temperature
= 25_C unless otherwise specified)
amb
4
10
3
10
VCE=10V
40 60 80
T
– Ambient Temperature ( °C )
amb
100
2
10
1
10
CEO
I – Collector Dark Current ( nA )
0
10
20
94 8249
Figure 2. Collector Dark Current vs. Ambient Temperature
100
www.vishay.de • FaxBack +1-408-970-5600
2 (6) Rev. 3, 20-May-99
Document Number 81505