Vishay Telefunken BPV11 Datasheet

Silicon NPN Phototransistor

Description

BPV11 is a very high sensitive silicon NPN epitaxial
planar phototransistor in a standard T–1¾ plastic
package.
Due to its waterclear epoxy lens the device is sensitive
to visible and near infrared radiation.
The viewing angle of ±15° makes it insensible to
ambient straylight.
A base terminal is available to enable biasing and
sensitivity control.

BPV11

Vishay Telefunken

Features

D

Very high photo sensitivity

D

Standard T–1¾ (ø 5 mm) package with clear lens

D

Angle of half sensitivity ϕ = ± 15

D

Base terminal available

°

12785

Applications

Detector for industrial electronic circuitry, measurement and control

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Collector Base Voltage V
Collector Emitter Voltage V
Emitter Base Voltage V
Collector Current I
Peak Collector Current
Total Power Dissipation
Junction Temperature T
Storage Temperature Range T
Soldering Temperature
Thermal Resistance Junction/Ambient R

tp/T = 0.5, tp x 10 ms
T

x 47 °C

amb

t x 5 s, 2 mm from body

CBO
CEO
EBO

C

I

CM

P

tot

stg

T

sd

thJA

80 V
70 V

5 V

50 mA
100 mA
150 mW

j

100

–55...+100

260
350 K/W

°

C

°

C

°

C

Document Number 81504
Rev. 3, 20-May-99

www.vishay.de • FaxBack [phone]

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BPV11

Vishay Telefunken

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit

Collector Emitter Breakdown
Voltage

Collector Dark Current VCE = 10 V, E = 0 I
DC Current Gain VCE = 5 V, IC = 5 mA, E = 0 h
Collector Emitter Capacitance VCE = 0 V, f = 1 MHz, E=0 C
Collector Base Capacitance VCB = 0 V, f = 1 MHz, E=0 C
Collector Light Current Ee=1 mW/cm2,

Angle of Half Sensitivity ϕ ±15 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation

Voltage
Turn–On Time VS=5 V, IC=5 mA,

Turn–Off Time VS=5 V, IC=5 mA,

Cut–Off Frequency VS=5 V, IC=5 mA,

IC = 1 mA V

l

=950 nm, V

CE

=5 V

Ee=1 mW/cm2, l=950 nm,
IC=1 mA

R

=100

=100

W

W

W

L

R

L

RL=100

(BR)CE

O

CEO

FE
CEO
CBO

I

ca

l

p

l

0.5

V

CEsat

t

on

t

off

f

c

70 V

1 50 nA

450

15 pF
19 pF

3 10 mA

850 nm

620...980 nm
130 300 mV

6

5

110 kHz

m

s

m

s

Typical Characteristics (T

200

160

120

R

thJA

80

40

tot

P – Total Power Dissipation ( mW )

0

020406080

T

94 8300

Figure 1. Total Power Dissipation vs.

– Ambient Temperature ( °C )

amb

Ambient Temperature

= 25_C unless otherwise specified)

amb

4

10

3

10

VCE=10V

40 60 80

T

– Ambient Temperature ( °C )

amb

Ambient Temperature

100

CEO

I – Collector Dark Current ( nA )

94 8249

2

10

1

10

0

10

20

Figure 2. Collector Dark Current vs.

100

www.vishay.de • FaxBack [phone]
2 (6) Rev. 3, 20-May-99

Document Number 81504