Vishay Telefunken BPV10NF Datasheet

High Speed Silicon PIN Photodiode
BPV10NF
Vishay Telefunken
Description
94 8390
Features
D
Extra fast response times
D
High modulation bandwidth (>100 MHz)
D
High radiant sensitivity
D
Radiant sensitive area A=0.78mm
D
Low junction capacitance
D
Standard T–1¾ (ø 5 mm) package with universal IR filter
D
Angle of half sensitivity ϕ = ± 20
2
°
Applications
Infrared high speed remote control and free air transmission systems with high modulation frequencies or high data transmission rate requirements , especially for direct point to point links. BPV10NF is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK– coded, 450 kHz or 1.3 MHz). Recommended emitter diodes are TSHF 5...–series or TSSF 4500.
Absolute Maximum Ratings
T
= 25_C
amb
Parameter Test Conditions Symbol Value Unit Reverse Voltage V Power Dissipation Junction Temperature T Operating Temperature Range T Storage Temperature Range T Soldering Temperature Thermal Resistance Junction/Ambient R
Document Number 81503 Rev. 2, 20-May-99
T
x 25 °C
amb
2 mm from body, t x 5 s
www.vishay.de FaxBack +1-408-970-5600
P
amb
stg
T
sd
thJA
R V
j
60 V 215 mW 100
–55...+100 –55...+100
260 350 K/W
° ° ° °
C C C C
1 (5)
BPV10NF
Vishay Telefunken
Basic Characteristics
T
= 25_C
amb
Parameter Test Conditions Symbol Min Typ Max Unit Forward Voltage IF = 50 mA V Breakdown Voltage IR = 100 mA, E = 0 V Reverse Dark Current VR = 20 V, E = 0 I Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C Open Circuit Voltage Ee = 1 mW/cm2, l = 870 nm V Short Circuit Current Ee = 1 mW/cm2, l = 870 nm I Reverse Light Current Ee = 1 mW/cm2, l = 870 nm,
V
= 5 V
R
Ee = 1 mW/cm2, l = 950 nm,
F
(BR)
ro
D o
k
I
ra
I
ra
60 V
30 60
VR = 5 V
Temp. Coefficient of I
ra
Ee = 1 mW/cm2, l = 870 nm,
TK
Ira
VR = 5 V Absolute Spectral Sensitivity VR = 5 V, l = 870 nm s(l) 0.55 A/W Angle of Half Sensitivity ϕ ±20 deg Wavelength of Peak Sensitivity Range of Spectral Bandwidth Quantum Efficiency
l
= 950 nm
l
p
l
0.5
h
Noise Equivalent Power VR=20 V, l=950 nm NEP 3x10 Detectivity VR=20 V, l=950 nm D
Rise Time VR=50 V, RL=50 W,
l
=820 nm
Fall Time VR=50 V, RL=50 W,
l
=820 nm
*
t
r
t
f
1 1.3 V
1 5 nA
11 pF
450 mV
50 55
m m
m
–0.1 %/K
940 nm
790...1050 nm 70 %
3x10
–14
12
W/ Hz cmHz/
W
2.5 ns
2.5 ns
A A
A
Typical Characteristics (T
1000
100
10
ro
I – Reverse Dark Current ( nA )
1
20 40 60 80
T
94 8436
Figure 1. Reverse Dark Current vs. Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600 2 (5) Rev. 2, 20-May-99
– Ambient Temperature ( °C )
amb
VR=20V
= 25_C unless otherwise specified)
amb
1.4
1.2
1.0
VR=5V
E
=1mW/cm
e
l
=870nm
T
– Ambient Temperature ( °C )
amb
Ambient Temperature
100
0.8
ra rel
I – Relative Reverse Light Current
0.6 020406080
94 8621
Figure 2. Relative Reverse Light Current vs.
2
100
Document Number 81503
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