Vishay Telefunken BPV10 Datasheet

Silicon PIN Photodiode

BPV10

Vishay Telefunken

Description

BPV10 is a very high speed and high sensitive PIN
photodiode in a standard T–1¾ plastic package.
Due to its waterclear epoxy the device is sensitive to
visible and infrared radiation.

94 8390

Features

D

Extra fast response times

D

High bandwidth B = 250 MHz at VR=12 V

D

High photo sensitivity

D

Radiant sensitive area A=0.78mm

D

Standard T–1¾ (ø 5 mm) package with clear lens

D

Angle of half sensitivity ϕ = ± 20

2

°

Applications

Wide band detector for demodulation of fast signals, industrial electronics, measurement, control circuits and
fast interrupters

Absolute Maximum Ratings

T

= 25_C

amb

Parameter Test Conditions Symbol Value Unit
Reverse Voltage V
Power Dissipation T
Junction Temperature T
Storage Temperature Range T
Soldering Temperature t x 5 s, 2 mm from body T
Thermal Resistance Junction/Ambient R

x 25 °C P

amb

R
V

j

stg

sd

thJA

60 V
215 mW
100

–55...+100

260
350 K/W

°

C

°

C

°

C

Document Number 81502
Rev. 3, 20-May-99

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1 (5)

BPV10

g

g

Vishay Telefunken

Basic Characteristics

T

= 25_C

amb

Parameter Test Conditions Symbol Min Typ Max Unit
Forward Voltage IF = 50 mA V
Breakdown Voltage IR = 100 mA, E = 0 V
Reverse Dark Current VR = 20 V, E = 0 I
Diode Capacitance VR = 0 V, f = 1 MHz, E = 0 C

VR = 5 V, f = 1 MHz, E = 0 C

Open Circuit Voltage EA = 1 klx V

Ee = 1 mW/cm2, l = 950 nm V

Short Circuit Current EA = 1 klx I

Ee = 1 mW/cm2, l = 950 nm I

Reverse Light Current EA = 1 klx, VR = 5 V I

Ee = 1 mW/cm2,

l

= 950 nm, VR = 5 V

F

(BR)

ro

D
D
o

o
k
k

ra

I

ra

60 V

38 70

Absolute Spectral Sensitivity VR = 5 V, l = 950 nm s(l) 0.55 A/W
Angle of Half Sensitivity ϕ ±20 deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency

l

= 950 nm

l

p

l

0.5

h

Noise Equivalent Power VR = 20 V, l = 950 nm NEP 3x10
Detectivity VR = 20 V, l = 950 nm D

Rise Time VR = 50 V, RL = 50 W,

l

= 820 nm

Fall Time VR = 50 V, RL = 50 W,

l

= 820 nm

*

t

r

t

f

1.0 1.3 V

1 5 nA

11 pF

3.8 pF
480 mV
450 mV

80
65
85

m
m
m
m

920 nm

570...1040 nm
72 %

3x10

–14

12

W/√ Hz
cm√Hz/

W

2.5 ns

2.5 ns

A
A
A
A

Typical Characteristics (T

1000

100

10

ro

I – Reverse Dark Current ( nA )

1

20 40 60 80

T

94 8436

Figure 1. Reverse Dark Current vs. Ambient Temperature

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2 (5) Rev. 3, 20-May-99

– Ambient Temperature ( °C )

amb

VR=20V

= 25_C unless otherwise specified)

amb

1.4

VR=5V

l

=950nm

– Ambient Temperature ( °C )

amb

Ambient Temperature

100

1.2

1.0

0.8

ra rel

I – Relative Reverse Light Current

0.6
020406080

94 8416

Figure 2. Relative Reverse Light Current vs.

T

100

Document Number 81502