Vishay Telefunken BFW92 Datasheet
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range.
Features
D
High power gain
D
Low noise figure
3
2
BFW92
Vishay Telefunken
94 9308
1
13623
BFW92 Marking: BFW92
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
≤ 60 °C P
amb
Junction temperature T
Storage temperature range T
CBO
CEO
EBO
C
tot
j
stg
25 V
15 V
2.5 V
25 mA
300 mW
150
–55 to +150
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm
plated with 35mm Cu
3
R
thJA
300 K/W
°
C
°
C
Document Number 85040
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
1 (5)
BFW92
qy
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 25 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 2.5 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA V
DC forward current transfer ratio VCE = 1 V, IC = 2 mA h
VCE = 1 V, IC = 25 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 5 V, IC = 2 mA, f = 300 MHz f
VCE = 5 V, IC = 14 mA, f = 300 MHz f
VCE = 5 V, IC = 25 mA, f = 300 MHz f
Collector-base capacitance VCB = 5 V, f = 1 MHz C
Collector-emitter capacitance VCE = 5 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 5 V, IC = 2 mA, ZS = 50 W,
f = 500 MHz
Power gain VCE = 5 V, IC = 10 mA, ZS = 50 W,
f = 200 MHz
VCE = 5 V, IC = 10 mA, ZS = 50 W,
f = 800 MHz
Signal–to–intermodulation
ratio
VCE = 6 V, IC = 10 mA, ZL = 37.5 W,
V1 = 100 mV, f1 = 183 MHz,
V2 = 100 mV, f2 = 200 MHz,
f
= 217 MHz
dIM
F 3.5 dB
G
G
d
CES
CBO
EBO
(BR)CEO
CEsat
FE
FE
T
T
T
cb
ce
eb
pe
pe
IM
100mA
100 nA
10
m
A
15 V
0.1 0.6 V
20 100 150
20
1 1.5 GHz
2.4 GHz
1.3 2.1 GHz
0.5 pF
0.3 pF
0.9 pF
23 dB
11 dB
–45 dB
www.vishay.de • FaxBack +1-408-970-5600
2 (5)
Document Number 85040
Rev. 3, 20-Jan-99
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