Vishay Telefunken BFS17W, BFS17, BFS17R Datasheet
BFS17/BFS17R/BFS17W
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For broadband amplifiers up to 1 GHz.
Features
D
High power gain
D
SMD-package
Vishay Telefunken
1
94 9280
23
BFS17 Marking: E1
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
1
13 652
2
BFS17W Marking: WE1
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
3
13 581
13 570
1
9510527
23
BFS17R Marking: E4
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
Document Number 85038
Rev. 4, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
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BFS17/BFS17R/BFS17W
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
≤ 60 °C P
amb
Junction temperature T
Storage temperature range T
CBO
CEO
EBO
C
tot
j
stg
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
3
R
thJA
25 V
15 V
2.5 V
25 mA
200 mW
150
–55 to +150
450 K/W
°
C
°
C
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Document Number 85038
Rev. 4, 20-Jan-99
BFS17/BFS17R/BFS17W
qy
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 25 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 2.5 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA V
DC forward current transfer ratio VCE = 1 V, IC = 2 mA h
VCE = 1 V, IC = 25 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 5 V, IC = 2 mA, f = 300 MHz f
VCE = 5 V, IC = 14 mA, f = 300 MHz f
VCE = 5 V, IC = 25 mA, f = 300 MHz f
Collector-base capacitance VCB = 5 V, f = 1 MHz C
Collector-emitter capacitance VCE = 5 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 5 V, IC = 2 mA, ZS = 50 W,
f = 800 MHz
Power gain VCE = 5 V, IC = 14 mA, ZS = 50 W,
f = 200 MHz
VCE = 5 V, IC = 14 mA, ZS = 50 W,
f = 800 MHz
Linear output voltage – two
tone intermodulation test
VCE = 5 V, IC = 14 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
W
Third order intercept point VCE = 5 V, IC = 14 mA, f = 800 MHz IP
F 3.5 dB
G
G
V1 = V
Vishay Telefunken
CES
CBO
EBO
(BR)CEO
CEsat
FE
FE
T
T
T
cb
ce
eb
pe
pe
2
3
15 V
20 100 150
20
1.5 GHz
2.4 GHz
2.1 GHz
0.45 pF
0.2 pF
0.8 pF
23 dB
11 dB
100 mV
23 dBm
100mA
100 nA
10
m
0.75 V
A
Document Number 85038
Rev. 4, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
3 (10)
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