Vishay Telefunken BFR96TS Datasheet
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
3
2
BFR96TS
Vishay Telefunken
94 9308
1
13623
BFR96TS Marking: BFR96TS
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
≤ 70 °C P
amb
Junction temperature T
Storage temperature range T
CBO
CEO
EBO
C
tot
j
stg
20 V
15 V
2.5 V
100 mA
700 mW
175
–65 to +150
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm
plated with 35mm Cu
3
R
thJA
150 K/W
°
C
°
C
Document Number 85037
Rev. 4, 20-Jan-99
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BFR96TS
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 20 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 2.5 V, IC = 0 I
Collector-emitter breakdown voltage IC = 5 mA, IB = 0 V
DC forward current transfer ratio VCE = 10 V, IC = 70 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 10 V, IC = 70 mA, f = 500 MHz f
Collector-base capacitance VCB = 10 V, f = 1 MHz C
Collector-emitter capacitance VCE = 10 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 10 V, IC = 70 mA, ZS = 50 W,
f = 500 MHz
VCE = 10 V, IC = 70 mA, ZS = 50 W,
f = 800 MHz
Power gain VCE = 10 V, IC = 70 mA, ZS = 50 W,
Linear output voltage – two
tone intermodulation test
ZL = Z
VCE = 10 V, IC = 70 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
, f = 800 MHz
Lopt
W
Third order intercept point VCE = 10 V, IC = 70 mA, f = 800 MHz IP
F 3.3 dB
F 4.0 dB
G
V1 = V
CES
CBO
EBO
(BR)CEO
FE
T
cb
ce
eb
pe
2
3
100mA
100 nA
10
m
15 V
25 75 150
5 GHz
0.84 pF
0.4 pF
3.5 pF
11.5 dB
500 mV
37 dBm
A
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Document Number 85037
Rev. 4, 20-Jan-99
Common Emitter S–Parameters
BFR96TS
Vishay Telefunken
Z0 = 50 W,T
VCE/V IC/mA f/MHz
5 10 1000 0.436 157.3 2.31 60.3 0.153 64.0 0.359 –77.5
= 25_C, unless otherwise specified
amb
S11 S21 S12 S22
LIN
MAG
100 0.691 –68.6 11.94 137.4 0.044 59.4 0.807 –28.82
300 0.552 –135.5 6.04 100.7 0.071 46.5 0.521 –45.0
500 0.518 –162.6 3.85 84.4 0.087 49.4 0.453 –51.6
800 0.499 173.8 2.47 68.1 0.114 55.7 0.444 –63.0
5 1000 0.488 162.5 1.99 59.7 0.136 58.7 0.458 –71.3
1200 0.477 152.5 1.68 52.3 0.161 60.2 0.478 –79.3
1500 0.459 139.2 1.37 43.1 0.203 60.5 0.515 –91.2
1800 0.446 125.8 1.15 34.7 0.247 59.0 0.553 –102.4
2000 0.427 118.9 1.05 29.9 0.272 57.6 0.577 –109.4
100 0.538 –92.3 17.08 126.6 0.035 57.6 0.672 –38.9
300 0.465 –152.7 7.31 94.9 0.060 57.1 0.389 –51.7
500 0.452 –173.7 4.51 81.7 0.085 61.7 0.341 –57.7
800 0.444 167.6 2.87 67.7 0.125 64.1 0.343 –69.2
1200 0.429 148.6 1.96 53.5 0.182 63.0 0.379 –85.2
1500 0.413 136.4 1.59 44.7 0.227 60.3 0.415 –96.2
1800 0.403 124.0 1.35 36.5 0.271 57.0 0.451 –106.4
2000 0.387 116.8 1.24 31.8 0.294 54.8 0.474 –112.6
100 0.387 –134.8 22.79 112.9 0.024 65.1 0.467 –52.1
300 0.401 –172.7 8.44 89.5 0.055 71.8 0.255 –60.2
500 0.400 174.0 5.13 79.0 0.088 72.5 0.234 –67.0
800 0.401 160.7 3.25 67.1 0.137 69.9 0.249 –79.7
30 1000 0.392 152.5 2.61 60.5 0.170 67.7 0.269 –87.9
1200 0.390 144.5 2.21 54.2 0.202 64.8 0.291 –95.2
1500 0.375 133.8 1.81 46.1 0.249 60.2 0.326 –105.1
1800 0.365 121.9 1.54 38.3 0.293 55.6 0.362 –113.7
2000 0.351 115.4 1.41 33.6 0.315 52.7 0.383 –119.0
ANG
deg deg deg deg
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
Document Number 85037
Rev. 4, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
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