Vishay Telefunken BFR91A Datasheet
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band antenna amplifier.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
3
2
BFR91A
Vishay Telefunken
94 9308
1
13623
BFR91A Marking: BFR91A
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
≤ 60 °C P
amb
Junction temperature T
Storage temperature range T
CBO
CEO
EBO
C
tot
j
stg
20 V
12 V
2 V
50 mA
300 mW
150
–65 to +150
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm
plated with 35mm Cu
3
R
thJA
300 K/W
°
C
°
C
Document Number 85031
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
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BFR91A
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 20 V, VBE = 0 I
Collector-base cut-off current VCB = 20 V, IE = 0 I
Emitter-base cut-off current VEB = 2 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA V
DC forward current transfer ratio VCE = 5 V, IC = 30 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 5 V, IC = 30 mA, f = 500 MHz f
Collector-base capacitance VCB = 5 V, f = 1 MHz C
Collector-emitter capacitance VCE = 10 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 8 V, ZS = 50 W, f = 800 MHz,
IC = 5 mA
VCE = 8 V, ZS = 50 W, f = 800 MHz,
IC = 30 mA
Power gain VCE = 8 V, IC = 30 mA, ZS = 50 W,
Linear output voltage – two
tone intermodulation test
ZL = Z
VCE = 8 V, IC = 30 mA, dIM = 60 dB,
f
= 806 MHz, f2 = 810 MH,
1
ZS = ZL = 50
, f = 800 MHz
Lopt
W
Third order intercept point VCE = 8 V, IC = 30 mA, f = 800 MHz IP
F 1.6 dB
F 2.3 dB
G
V1 = V
CES
CBO
EBO
(BR)CEO
CEsat
FE
T
cb
ce
eb
pe
2
3
100mA
100 nA
10
m
12 V
0.1 0.4 V
40 90 150
6 GHz
0.4 pF
0.3 pF
1.5 pF
14 dB
280 mV
32 dBm
A
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Document Number 85031
Rev. 3, 20-Jan-99
Common Emitter S–Parameters
BFR91A
Vishay Telefunken
Z0 = 50 W,T
VCE/V IC/mA f/MHz
8 5 1000 0.27 –153.8 3.50 77.8 0.10 65.0 0.58 –41.3
= 25_C, unless otherwise specified
amb
S11 S21 S12 S22
LIN
MAG
100 0.92 –22.1 6.38 162.8 0.02 78.4 0.9 –8.1
300 0.78 –61.3 5.42 134.7 0.05 61.5 0.88 –20.8
500 0.64 –92.7 4.38 114.3 0.07 52.8 0.79 –28.2
800 0.51 –128.0 3.19 92.9 0.09 49.3 0.73 –35.9
2 1000 0.45 –146.3 2.65 82.3 0.10 50.4 0.71 –40.6
1200 0.41 –161.4 2.27 73.8 0.11 53.1 0.70 –45.1
1500 0.37 177.9 1.85 63.0 0.12 57.8 0.71 –52.3
1800 0.34 159.7 1.58 53.4 0.14 61.8 0.73 –60.0
2000 0.32 149.7 1.44 48.5 0.16 63.8 0.74 –64.9
100 0.79 –31.8 13.51 153.5 0.02 75.1 0.92 –13.4
300 0.54 –78.6 9.24 119.9 0.04 61.9 0.73 –26.4
500 0.40 –107.8 6.44 101.9 0.06 61.0 0.64 –31.1
800 0.30 –138.4 4.30 85.7 0.09 63.7 0.59 –36.3
1200 0.25 –167.2 2.98 71.1 0.12 65.7 0.58 –45.8
1500 0.22 175.1 2.41 62.4 0.14 66.0 0.59 –53.2
1800 0.21 157.8 2.06 54.2 0.18 65.3 0.61 –60.6
2000 0.20 149.4 1.88 49.7 0.19 64.5 0.62 –65.5
100 0.63 –43.0 21.15 143.4 0.02 72.5 0.85 –18.5
300 0.35 –91.7 11.55 109.2 0.04 67.2 0.62 –28.0
500 0.25 –117.7 7.47 95.1 0.06 69.5 0.55 –30.6
800 0.20 –145.2 4.85 82.1 0.09 71.1 0.53 –36.4
10 1000 0.18 –160.0 3.93 75.5 0.11 71.1 0.52 –41.3
1200 0.17 –171.7 3.32 69.8 0.13 70.4 0.52 –45.9
1500 0.16 173.5 2.70 62.0 0.16 68.7 0.53 –53.7
1800 0.15 153.9 2.30 54.6 0.19 66.4 0.54 –61.4
2000 0.15 148.4 2.09 50.3 0.21 64.8 0.55 –66.5
ANG
deg deg deg deg
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
Document Number 85031
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
3 (8)
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