Vishay Telefunken BFR90 Datasheet
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
3
2
BFR90
Vishay Telefunken
94 9308
1
13623
BFR90 Marking: BFR90
Plastic case (TO 50)
1 = Collector, 2 = Emitter, 3 = Base
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
≤ 60 °C P
amb
Junction temperature T
Storage temperature range T
CBO
CEO
EBO
C
tot
j
stg
20 V
15 V
2 V
30 mA
300 mW
150
–65 to +150
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm
plated with 35mm Cu
3
R
thJA
300 K/W
°
C
°
C
Document Number 85028
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
1 (9)
BFR90
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 20 V, VBE = 0 I
Collector-base cut-off current VCB = 20 V, IE = 0 I
Emitter-base cut-off current VEB = 2 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
DC forward current transfer ratio VCE = 10 V, IC = 14 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 10 V, IC = 14 mA, f = 500 MHz f
Collector-base capacitance VCB = 10 V, f = 1 MHz C
Collector-emitter
capacitance
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 10 V, IC = 2 mA, f = 500 MHz,
Power gain VCE = 10 V, IC = 14 mA, ZL = Z
Linear output voltage – two
tone intermodulation test
Third order intercept point VCE = 10 V, IC = 14 mA, f = 800 MHz IP
VCE = 10 V, f = 1 MHz C
ZS = 50
W
,
Lopt
f = 500 MHz
VCE = 10 V, IC = 14 mA, ZL = Z
Lopt
,
f = 800 MHz
VCE = 10 V, IC = 14 mA, dIM = 60 dB,
f
= 806 MHz, f2 = 810 MHz,
1
ZS = ZL = 50
W
V1 = V
F 2.2 dB
G
G
CES
CBO
EBO
(BR)CEO
FE
T
cb
ce
eb
pe
pe
2
3
100mA
100 nA
10
m
15 V
25 50 150
5 GHz
0.35 pF
0.3 pF
1.3 pF
19.5 dB
14 dB
100 mV
23 dBm
A
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85028
Rev. 3, 20-Jan-992 (9)
Common Emitter S–Parameters
BFR90
Vishay Telefunken
Z0 = 50 W,T
VCE/V IC/mA f/MHz
5 5 1000 0.18 150.9 2.66 63.4 0.12 57.3 0.50 –34.5
= 25_C, unless otherwise specified
amb
S11 S21 S12 S22
LIN
MAG
100 0.82 –27.8 6.31 155.8 0.03 73.8 0.95 –10.2
300 0.59 –72.7 4.66 121.6 0.06 54.0 0.80 –22.1
500 0.41 –107.7 3.49 99.9 0.08 46.7 0.70 –27.0
800 0.30 –154.9 2.474 78.0 0.10 44.9 0.63 –32.3
2 1000 0.29 176.7 2.08 66.9 0.11 46.2 0.60 –36.3
1200 0.30 153.2 1.80 56.4 0.12 47.6 0.57 –40.6
1500 0.35 126.8 1.50 43.1 0.15 48.9 0.54 –47.6
1800 0.41 108.7 1.32 31.2 0.18 49.2 0.50 –55.5
2000 0.45 99.1 1.22 24.4 0.20 48.0 0.48 –61.1
100 0.65 –39.9 12.44 145.2 0.02 70.3 0.88 –16.2
300 0.35 –91.8 7.26 108.3 0.05 58.7 0.65 –25.4
500 0.22 –130.4 4.85 90.2 0.07 58.5 0.57 –26.9
800 0.16 177.4 3.22 72.6 0.10 58.2 0.52 –30.6
1200 0.21 131.6 2.28 54.4 0.14 55.5 0.47 –38.6
1500 0.27 112.7 1.89 42.8 0.18 51.9 0.44 –45.2
1800 0.33 100.1 1.65 31.8 0.21 48.2 0.40 –52.1
2000 0.37 92.8 1.53 25.2 0.24 45.0 0.38 –56.9
100 0.45 –54.6 18.55 133.7 0.02 70.4 0.79 –21.5
300 0.19 –112.5 8.73 99.4 0.04 66.6 0.55 –24.7
500 0.12 –156.4 5.54 84.5 0.07 66.8 0.49 –24.9
800 0.12 148.7 3.60 69.5 0.11 64.0 0.46 –28.7
10 1000 0.15 129.3 2.96 61.3 0.13 61.4 0.44 –32.8
1200 0.18 117.0 2.51 53.0 0.16 58.0 0.42 –37.1
1500 0.24 104.4 2.08 42.1 0.19 52.8 0.38 –43.5
1800 0.30 94.9 1.82 31.8 0.23 47.7 0.35 –49.9
2000 0.34 89.5 1.67 25.4 0.25 43.7 0.32 –54.5
ANG
deg deg deg deg
LIN
MAG
ANG
LIN
MAG
ANG
LIN
MAG
ANG
Document Number 85028
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
3 (9)
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