Vishay Telefunken BFR193TW, BFR193T Datasheet
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low–noise, high–gain applications such as power
amplifiers up to 2GHz and for linear broadband
amplifiers.
Features
D
Low noise figure
D
High transition frequency fT = 8 GHz
D
Excellent large-signal behaviour
BFR193T/BFR193TW
Vishay Telefunken
1
94 9280
23
BFR193T Marking: RC
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
1
13 652
2
BFR193TW Marking: WRC
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
3
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 45 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
13 570
20 V
12 V
2 V
80 mA
420 mW
150
–65 to +150
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Junction ambient mounted on glass fibre printed board
(25 x 20 x 1.5) mm3 plated with 35mm Cu
Document Number
Rev. 2, 14-Feb-00
R
thJA
www.vishay.de • FaxBack +1-408-970-5600
250 K/W
1 (4)
BFR193T/BFR193TW
Noise figure
F
Power gain
G
Transducer gain
|S
2
|
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector-emitter cut-off current VCE = 20 V, VEB = 0 I
Collector-base cut-off current VCB = 10 V I
Emitter-base cut-off current VEB = 1 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA V
Collector-emitter saturation voltage IC = 50 mA, IB = 5 mA V
DC forward current transfer ratio VCE = 8 V, IC = 30 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 8 V, IC = 50 mA, f = 1 GHz f
Collector-base capacitance VCB = 10 V, f = 1 MHz C
Collector-emitter capacitance VCE = 10 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Third order intercept point
at output
ZS = Z
VCE = 8 V, IC = 10 mA
ZS = Z
VCE = 8 V, IC = 10 mA
ZS = Z
V
= 8 V, IC = 30 mA
CE
ZS = Z
VCE = 8 V, IC = 30 mA
ZO=50W, f = 900 MHz,
VCE = 8 V, IC = 30 mA
ZO=50W, f = 2 GHz,
V
= 8 V, IC = 30 mA
CE
f = 900 MHz, VCE = 8 V, IC = 50 mA IP
=50W, f = 900 MHz,
Sopt,ZL
=50W, f = 2 GHz,
Sopt,ZL
=50W, f = 900 MHz,
Sopt,ZL
=50W, f = 2 GHz,
Sopt,ZL
CES
CBO
EBO
(BR)CEO
CEsat
FE
T
cb
ce
eb
pe
21e
3
100mA
100 nA
1
m
A
12 V
0.1 0.5 V
50 100 150
6 8 GHz
0.6 1.0 pF
0.25 pF
1.6 pF
1.2 dB
2.1 dB
15 dB
9 dB
13 dB
7 dB
34 dBm
www.vishay.de • FaxBack +1-408-970-5600
2 (4)
Document Number
Rev. 2, 14-Feb-00
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