Vishay Telefunken BFR182TW, BFR182T Datasheet
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 1 mA to 20 mA.
Features
D
Low noise figure
D
High power gain
BFR182T/BFR182TW
Vishay Telefunken
1
94 9280
23
BFR182T Marking: RG
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
1
13 652
2
BFR182TW Marking: WRG
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
3
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60 °C P
amb
CBO
CEO
EBO
C
B
tot
j
stg
13 570
15 V
10 V
2 V
35 mA
5 mA
200 mW
150
–65 to +150
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Document Number 85025
Rev. 2, 20-Jan-99
3
R
thJA
www.vishay.de • FaxBack +1-408-970-5600
450 K/W
1 (4)
BFR182T/BFR182TW
qy
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 15 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 1 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA V
DC forward current transfer ratio VCE = 6 V, IC = 5 mA h
VCE = 8 V, IC = 20 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 6 V, IC = 5 mA, f = 500 MHz f
VCE = 8 V, IC = 20 mA, f = 500 MHz f
Collector-base capacitance VCB = 10 V, f = 1 MHz C
Collector-emitter capacitance VCE = 10 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 6 V, IC = 5 mA, ZS = Z
f = 900 MHz
VCE = 6 V, IC = 5 mA, ZS = Z
f = 1.75 GHz
Power gain VCE = 8 V, IC = 20 mA, ZS = 50 W,
ZL = Z
, f = 900 MHz
Lopt
VCE = 8 V, IC = 20 mA, ZS = 50 W,
Z
= Z
L
, f = 1.75 GHz
Lopt
Transducer gain VCE = 8 V, IC = 20 mA, f = 900 MHz,
Z0 = 50
W
Sopt
Sopt
,
,
G
G
S
CES
CBO
EBO
(BR)CEO
CEsat
FE
FE
T
T
cb
ce
eb
10 V
50 90
5.5 GHz
7.5 GHz
0.3 pF
0.2 pF
0.65 pF
100mA
100 nA
1
0.1 0.4 V
100
F 1.5 dB
F 2.0 dB
pe
pe
21e
2
15 dB
11 dB
14 dB
m
A
www.vishay.de • FaxBack +1-408-970-5600
2 (4)
Document Number 85025
Rev. 2, 20-Jan-99
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