Vishay Telefunken BFR181TW, BFR181T Datasheet
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA.
Features
D
Low noise figure
D
High power gain
BFR181T/BFR181TW
Vishay Telefunken
1
94 9280
23
BFR181T Marking: RF
Plastic case (SOT 23)
1 = Collector, 2 = Base, 3 = Emitter
13 581
1
13 652
2
BFR181TW Marking: WRF
Plastic case (SOT 323)
1 = Collector, 2 = Base, 3 = Emitter
3
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Base current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 78 °C P
amb
CBO
CEO
EBO
C
B
tot
j
stg
13 570
15 V
10 V
2 V
20 mA
2 mA
160 mW
150
–65 to +150
°
C
°
C
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
Document Number 85024
Rev. 2, 20-Jan-99
3
R
thJA
www.vishay.de • FaxBack +1-408-970-5600
450 K/W
1 (4)
BFR181T/BFR181TW
qy
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 15 V, VBE = 0 I
Collector-base cut-off current VCB = 10 V, IE = 0 I
Emitter-base cut-off current VEB = 1 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 15 mA, IB = 1.5 mA V
DC forward current transfer ratio VCE = 6 V, IC = 5 mA h
VCE = 6 V, IC = 10 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 3 V, IC = 6 mA, f = 500 MHz f
VCE = 8 V, IC = 20 mA, f = 500 MHz f
Collector-base capacitance VCB = 10 V, f = 1 MHz C
Collector-emitter capacitance VCE = 10 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 5 V, IC = 3 mA, ZS = Z
f = 900 MHz
VCE = 5 V, IC = 3 mA, ZS = Z
f = 1.75 GHz
Power gain VCE = 8 V, IC = 8 mA, ZS = 50 W,
ZL = Z
, f = 900 MHz
Lopt
VCE = 8 V, IC = 8 mA, ZS = 50 W,
Z
= Z
L
, f = 1.75 GHz
Lopt
Transducer gain VCE = 8 V, IC = 8 mA, f = 900 MHz,
Z0 = 50
W
Sopt
Sopt
,
,
G
G
S
CES
CBO
EBO
(BR)CEO
CEsat
FE
FE
T
T
cb
ce
eb
10 V
50 100
6.8 GHz
8.0 GHz
0.3 pF
0.2 pF
0.4 pF
100mA
100 nA
1
0.1 0.4 V
100
F 1.5 dB
F 2.2 dB
pe
pe
21e
2
14.8 dB
12 dB
14 dB
m
A
www.vishay.de • FaxBack +1-408-970-5600
2 (4)
Document Number 85024
Rev. 2, 20-Jan-99
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