Vishay Telefunken BFP193TW, BFP193TRW, BFP193T Datasheet

BFP193T/BFP193TW/BFP193TRW

Silicon NPN Planar RF Transistor

Electrostatic sensitive device.
Observe precautions for handling.

Applications

For low noise and high gain applications such as power
amplifiers up to 2 GHz and for linear broadband ampli­fiers.

Features

D

Low noise figure

D

High transition frequency fT = 8 GHz

D

Excellent large signal behaviour

1

2

1

Vishay Telefunken

2

13 653

4

3

BFP193TW Marking: W19
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

13 566

21

94 9279

13 579

43

BFP193T Marking: 193
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

13 56613 654

34

BFP193TRW Marking: W91
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter

Document Number 85015
Rev. 1, 20-Jan-99

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BFP193T/BFP193TW/BFP193TRW

Vishay Telefunken

Absolute Maximum Ratings

T

= 25_C, unless otherwise specified

amb

Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T

≤ 45 °C P

amb

Junction temperature T
Storage temperature range T

CBO
CEO
EBO

C
tot

j

stg

Maximum Thermal Resistance

T

= 25_C, unless otherwise specified

amb

Parameter T est Conditions Symbol Value Unit

Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm

plated with 35mm Cu

3

R

thJA

20 V
12 V

2 V

80 mA
420 mW
150

–65 to +150

250 K/W

°

C

°

C

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Document Number 85015

Rev. 1, 20-Jan-99