BFP182T/BFP182TW/BFP182TRW
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 1 mA to 20 mA.
Features
D
Low power applications
D
Low noise figure
D
High transition frequency
1
2
1
Vishay Telefunken
2
13 653
4
3
BFP182TW Marking: W82
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 566
21
94 9279
13 579
43
BFP182T Marking: 82P
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 56613 654
34
BFP182TRW Marking: WSG
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Document Number 85013
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
BFP182T/BFP182TW/BFP182TRW
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
≤ 60 °C P
amb
Junction temperature T
Storage temperature range T
CBO
CEO
EBO
C
tot
j
stg
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
3
R
thJA
15 V
10 V
2 V
35 mA
200 mW
150
–65 to +150
450 K/W
°
C
°
C
www.vishay.de • FaxBack +1-408-970-5600
2 (6)
Document Number 85013
Rev. 3, 20-Jan-99