BFP181T/BFP181TW/BFP181TRW
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.5 mA to 12 mA.
Features
D
Low noise figure
D
High power gain
1
2
1
Vishay Telefunken
2
13 653
4
3
BFP181TW Marking: W18
Plastic case (SOT 343)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 566
21
94 9279
13 579
43
BFP181T Marking: 18
Plastic case (SOT 143)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
13 56613 654
34
BFP181TRW Marking: WSF
Plastic case (SOT 343R)
1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter
Document Number 85012
Rev. 3, 20-Jan-99
www.vishay.de • FaxBack +1-408-970-5600
1 (6)
BFP181T/BFP181TW/BFP181TRW
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
≤ 78 °C P
amb
Junction temperature T
Storage temperature range T
CBO
CEO
EBO
C
tot
j
stg
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter T est Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
3
R
thJA
15 V
10 V
2 V
20 mA
160 mW
150
–65 to +150
450 K/W
°
C
°
C
www.vishay.de • FaxBack +1-408-970-5600
2 (6)
Document Number 85012
Rev. 3, 20-Jan-99