Vishay Telefunken BFG92A Datasheet
Silicon NPN Planar RF Transistor
Electrostatic sensitive device.
Observe precautions for handling.
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Features
D
High power gain
D
Low noise figure
D
High transition frequency
21
BFG92A
Vishay Telefunken
94 9279
13 579
43
BFG92A Marking: P8
Plastic case (SOT 143)
1 = Collector, 2 = Base, 3 = Emitter, 4 = Emitter
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
Total power dissipation T
Junction temperature T
Storage temperature range T
≤ 60 °C P
amb
CBO
CEO
EBO
C
tot
j
stg
20 V
15 V
2 V
30 mA
200 mW
150
–65 to +150
Maximum Thermal Resistance
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Value Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35mm Cu
3
R
thJA
450 K/W
°
C
°
C
Document Number 85075
Rev. 1, 11-Nov-99
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
BFG92A
Vishay Telefunken
Electrical DC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Collector cut-off current VCE = 20 V, VBE = 0 I
Collector-base cut-off current VCB = 15 V, IE = 0 I
Emitter-base cut-off current VEB = 2 V, IC = 0 I
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V
Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA V
DC forward current transfer ratio VCE = 10 V, IC = 14 mA h
Electrical AC Characteristics
T
= 25_C, unless otherwise specified
amb
Parameter Test Conditions Symbol Min Typ Max Unit
Transition frequency VCE = 10 V, IC = 14 mA, f = 500 MHz f
Collector-base capacitance VCB = 10 V, f = 1 MHz C
Collector-emitter capacitance VCE = 10 V, f = 1 MHz C
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C
Noise figure VCE = 10 V, ZS = 50 W, f = 800 MHz,
IC = 2 mA
Power gain VCE = 10 V, ZL = Z
, IC = 14 mA, f
Lopt
= 800 MHz
Linear output voltage – two
tone intermodulation test
VCE = 10 V, IC = 14 mA, dIM = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = Z
= 50
W
L
Third order intercept point VCE = 10 V, IC = 14 mA, f = 800 MHz IP
T
cb
ce
eb
F 1.8 dB
G
pe
V1 = V
CES
CBO
EBO
(BR)CEO
CEsat
FE
2
3
100mA
100 nA
10
m
15 V
0.1 0.4 V
50 100 150
6 GHz
0.25 pF
0.2 pF
0.7 pF
17 dB
120 mV
24 dBm
A
www.vishay.de • FaxBack +1-408-970-5600
2 (4)
Document Number 85075
Rev. 1, 11-Nov-99
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