Vishay Telefunken BB814-2, BB814-1, BB814 Datasheet

BB814

Vishay Telefunken

Rev. 3, 01-Apr-99 1 (3)

www.vishay.de • FaxBack [phone]

Document Number 85555

Silicon Epitaxial Planar Dual Capacitance Diode

Features

D

Common cathode

Applications

Tuning of separate resonant circuits, push–pull circuits
in FM range, especially for car radios

94 8550

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit

Repetitive peak reverse voltage V

RRM

20 V

Reverse voltage V

R

18 V

Forward current I

F

50 mA

Junction temperature T

j

125

°

C

Storage temperature range T

stg

–55...+150

°

C

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Reverse current VR=16V I

R

20 nA

VR=16V, Tj=60°C I

R

200 nA

Diode capacitance 1) VR=2V Group 1 C

D

43 45 pF

)

Group 2 C

D

44.5 46.5 pF

VR=8V Group 1 C

D

19.1 21.95 pF

Group 2 C

D

19.75 22.70 pF

Capacitance ratio VR=2V,8V , f=1MHz CD2/ C

D8

2.05 2.25

Series resistance CD=38pF, f=100MHz r

s

0.5

W

1

) In the reverse voltage range of VR=2...8V for 4 diodes taped in sequence the max. deviation is 3%.

BB814

Vishay Telefunken

Rev. 3, 01-Apr-992 (3)

www.vishay.de • FaxBack [phone] Document Number 85555

Dimensions in mm

14384

14387

top view