Vishay Telefunken BB804-1, BB804-0, BB804, BB804-4, BB804-3 Datasheet

BB804

Vishay Telefunken

Rev. 3, 01-Apr-99 1 (3)

www.vishay.de • FaxBack [phone]

Document Number 85554

Silicon Epitaxial Planar Dual Capacitance Diode

Features

D

Common cathode

Applications

Tuning of separate resonant circuits, push–pull circuits
in FM range, especially for car radios

94 8550

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit

Repetitive peak reverse voltage V

RRM

20 V

Reverse voltage V

R

18 V

Forward current I

F

50 mA

Junction temperature T

j

100

°

C

Storage temperature range T

stg

–55...+150

°

C

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Reverse current VR=16V I

R

20 nA

VR=16V, Tj=60°C I

R

0.2

m

A

Diode capacitance 1) VR=2V, f=1MHz C

D

42 47.5 pF

)

VR=2V, f=1MHz Group 0 C

D

42 43.5 pF

VR=2V, f=1MHz Group 1 C

D

43 44.5 pF

VR=2V, f=1MHz Group 2 C

D

44 45.5 pF

VR=2V, f=1MHz Group 3 C

D

45 46.5 pF

VR=2V, f=1MHz Group 4 C

D

46 47.5 pF
Capacitance ratio VR=2V,8V , f=100MHz CD2/ CD81.65 1.75
Series resistance CD=38pF, f=100MHz r

s

0.3 0.4

W

Figure of merit CD=38pF, f=100MHz Q 100 140

1

) A packing unit (reel) contains diodes from one capacitance group only. Delivery of single capacitance

groups available only on request.

BB804

Vishay Telefunken

Rev. 3, 01-Apr-992 (3)

www.vishay.de • FaxBack [phone] Document Number 85554

Dimensions in mm

14384

14387

top view