Vishay Telefunken BAY80 Datasheet
Silicon Epitaxial Planar Diode
Applications
General purpose
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
Reverse voltage V
Peak forward surge current tp=1ms I
Repetitive peak forward current I
Forward current I
Average forward current I
Junction temperature T
Storage temperature range T
BAY80
Vishay Telefunken
94 9367
RRM
R
FSM
FRM
F
FAV
j
stg
150 V
120 V
1 A
625 mA
250 mA
200 mA
175
–65...+200
°
C
°
C
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, TL=constant R
Document Number 85553
Rev. 2, 01-Apr-99 1 (4)
thJA
www.vishay.de • FaxBack +1-408-970-5600
350 K/W
BAY80
g
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=0.1mA V
IF=10 mA V
IF=50 mA V
IF=100mA V
IF=150mA V
Reverse current VR=120V I
VR=120 V, Tj=150°C I
Breakdown voltage IR=100mA, tp/T=0.01,
tp=0.3ms
Diode capacitance VR=0, f=1MHz C
Differential forward resistance IF=10mA r
Reverse recovery time IF=IR=30mA, iR=3mA,
RL=100
W
V
F
F
F
F
F
R
R
(BR)
D
f
t
rr
0.4 0.52 V
0.63 0.78 V
0.73 0.92 V
0.78 1 V
1.07 V
100 nA
100
m
150 V
1.5 5 pF
5
50 ns
A
W
Characteristics (Tj = 25_C unless otherwise specified)
1000
100
m
Scattering Limit
10
1
R
I – Reverse Current ( A )
0.1
0.01
0 40 80 120 160
94 9084
Figure 1. Reverse Current vs. Junction Temperature
Tj – Junction Temperature ( °C )
VR=V
RRM
200
1000
Tj=25°C
100
10
1
F
I – Forward Current ( mA )
0.1
0 0.4 0.8 1.2 1.6
94 9085
Figure 2. Forward Current vs. Forward Voltage
VF – Forward Voltage ( V )
Scattering Limit
2.0
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85553
Rev. 2, 01-Apr-992 (4)
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